Polymorphism in chalcogenides of alkalineearth metals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2005
• Hauptverfasser: Drozdov, V.А., Pozhivatenko, V.V., Drozdov, М.А., Kovalchuk, V.V., Moiseev, L.M., Moiseeva, V.O.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121573
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Polymorphism in chalcogenides of alkalineearth metals / V.А. Drozdov, V.V. Pozhivatenko, М.А. Drozdov, V.V. Kovalchuk, L.M. Moiseev, V.O. Moiseeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 115-117. — Бібліогр.: 18 назв. — англ.

Calculations of structural phase transitions В1 - В2 under pressure in chalcogenides of alkaline-earth metals were carried out on the basis of approach of the local density functional theory, where as a fitting used was the constructive amendments of the potential by means of the electronic density...