Arsentyev, I., Bobyl, A., Tarasov, I., Shishkov, M., Boltovets, N., Ivanov, V., . . . Milenin, V. (2005). New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago Style (17th ed.) CitationArsentyev, I.N, et al. "New Technological Possibilities to Prepare InP Epitaxial Layers, as Well as Ohmic and Barrier Contacts to Them, and the Properties of Microwave Diodes Made on Their Basis." Semiconductor Physics Quantum Electronics & Optoelectronics 2005.
MLA (8th ed.) CitationArsentyev, I.N, et al. "New Technological Possibilities to Prepare InP Epitaxial Layers, as Well as Ohmic and Barrier Contacts to Them, and the Properties of Microwave Diodes Made on Their Basis." Semiconductor Physics Quantum Electronics & Optoelectronics, 2005.