New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. We demonstrate the advantages of TiBx−n-n⁺-n⁺⁺-InP Schottky-barrier diodes mad...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2005 |
| Main Authors: | , , , , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121574 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis / I.N. Arsentyev, A.V. Bobyl, I.S. Tarasov, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, A.B. Kamalov, R.V. Konakova, Ya.Ya. Kudryk, O.S. Lytvyn, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 105-114. — Бібліогр.: 29 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862726868777566208 |
|---|---|
| author | Arsentyev, I.N. Bobyl, A.V. Tarasov, I.S. Shishkov, M.V. Boltovets, N.S. Ivanov, V.N. Kamalov, A.B. Konakova, R.V. Kudryk, Ya.Ya. Lytvyn, O.S. Lytvyn, P.M. Markovskiy, E.P. Milenin, V.V. |
| author_facet | Arsentyev, I.N. Bobyl, A.V. Tarasov, I.S. Shishkov, M.V. Boltovets, N.S. Ivanov, V.N. Kamalov, A.B. Konakova, R.V. Kudryk, Ya.Ya. Lytvyn, O.S. Lytvyn, P.M. Markovskiy, E.P. Milenin, V.V. |
| citation_txt | New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis / I.N. Arsentyev, A.V. Bobyl, I.S. Tarasov, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, A.B. Kamalov, R.V. Konakova, Ya.Ya. Kudryk, O.S. Lytvyn, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 105-114. — Бібліогр.: 29 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. We demonstrate the advantages of TiBx−n-n⁺-n⁺⁺-InP Schottky-barrier diodes made on porous substrates over those made on the standard rigid substrates, as well as the possibility to make Gunn diodes (intended for the 120−150 GHz frequency range) on the InP epitaxial structures grown on porous substrates.
|
| first_indexed | 2025-12-07T18:59:37Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121574 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:59:37Z |
| publishDate | 2005 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Arsentyev, I.N. Bobyl, A.V. Tarasov, I.S. Shishkov, M.V. Boltovets, N.S. Ivanov, V.N. Kamalov, A.B. Konakova, R.V. Kudryk, Ya.Ya. Lytvyn, O.S. Lytvyn, P.M. Markovskiy, E.P. Milenin, V.V. 2017-06-14T16:57:19Z 2017-06-14T16:57:19Z 2005 New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis / I.N. Arsentyev, A.V. Bobyl, I.S. Tarasov, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, A.B. Kamalov, R.V. Konakova, Ya.Ya. Kudryk, O.S. Lytvyn, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 105-114. — Бібліогр.: 29 назв. — англ. 1560-8034 PACS 81.05.Rm https://nasplib.isofts.kiev.ua/handle/123456789/121574 A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. We demonstrate the advantages of TiBx−n-n⁺-n⁺⁺-InP Schottky-barrier diodes made on porous substrates over those made on the standard rigid substrates, as well as the possibility to make Gunn diodes (intended for the 120−150 GHz frequency range) on the InP epitaxial structures grown on porous substrates. The work was made in the framework of the
 Russia−Ukraine Program on Nanophysics and
 Nanoelectronics. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis Article published earlier |
| spellingShingle | New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis Arsentyev, I.N. Bobyl, A.V. Tarasov, I.S. Shishkov, M.V. Boltovets, N.S. Ivanov, V.N. Kamalov, A.B. Konakova, R.V. Kudryk, Ya.Ya. Lytvyn, O.S. Lytvyn, P.M. Markovskiy, E.P. Milenin, V.V. |
| title | New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis |
| title_full | New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis |
| title_fullStr | New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis |
| title_full_unstemmed | New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis |
| title_short | New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis |
| title_sort | new technological possibilities to prepare inp epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121574 |
| work_keys_str_mv | AT arsentyevin newtechnologicalpossibilitiestoprepareinpepitaxiallayersaswellasohmicandbarriercontactstothemandthepropertiesofmicrowavediodesmadeontheirbasis AT bobylav newtechnologicalpossibilitiestoprepareinpepitaxiallayersaswellasohmicandbarriercontactstothemandthepropertiesofmicrowavediodesmadeontheirbasis AT tarasovis newtechnologicalpossibilitiestoprepareinpepitaxiallayersaswellasohmicandbarriercontactstothemandthepropertiesofmicrowavediodesmadeontheirbasis AT shishkovmv newtechnologicalpossibilitiestoprepareinpepitaxiallayersaswellasohmicandbarriercontactstothemandthepropertiesofmicrowavediodesmadeontheirbasis AT boltovetsns newtechnologicalpossibilitiestoprepareinpepitaxiallayersaswellasohmicandbarriercontactstothemandthepropertiesofmicrowavediodesmadeontheirbasis AT ivanovvn newtechnologicalpossibilitiestoprepareinpepitaxiallayersaswellasohmicandbarriercontactstothemandthepropertiesofmicrowavediodesmadeontheirbasis AT kamalovab newtechnologicalpossibilitiestoprepareinpepitaxiallayersaswellasohmicandbarriercontactstothemandthepropertiesofmicrowavediodesmadeontheirbasis AT konakovarv newtechnologicalpossibilitiestoprepareinpepitaxiallayersaswellasohmicandbarriercontactstothemandthepropertiesofmicrowavediodesmadeontheirbasis AT kudrykyaya newtechnologicalpossibilitiestoprepareinpepitaxiallayersaswellasohmicandbarriercontactstothemandthepropertiesofmicrowavediodesmadeontheirbasis AT lytvynos newtechnologicalpossibilitiestoprepareinpepitaxiallayersaswellasohmicandbarriercontactstothemandthepropertiesofmicrowavediodesmadeontheirbasis AT lytvynpm newtechnologicalpossibilitiestoprepareinpepitaxiallayersaswellasohmicandbarriercontactstothemandthepropertiesofmicrowavediodesmadeontheirbasis AT markovskiyep newtechnologicalpossibilitiestoprepareinpepitaxiallayersaswellasohmicandbarriercontactstothemandthepropertiesofmicrowavediodesmadeontheirbasis AT mileninvv newtechnologicalpossibilitiestoprepareinpepitaxiallayersaswellasohmicandbarriercontactstothemandthepropertiesofmicrowavediodesmadeontheirbasis |