Optical properties of p-type porous GaAs
Samples of p-type porous GaAs was obtained by electrochemical anodization of (100) oriented p-type GaAs. The formation of porous structure has been confirmed by Raman spectroscopy and scanning electron microscopy investigations. The low-frequency Raman shift of the peaks conditioned by the main opti...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2005 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121575 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optical properties of p-type porous GaAs / V.V. Kidalov, L. Beji, G.A. Sukach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 118-120. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121575 |
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dspace |
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Kidalov, V.V. Beji, L. Sukach, G.A. 2017-06-14T16:58:20Z 2017-06-14T16:58:20Z 2005 Optical properties of p-type porous GaAs / V.V. Kidalov, L. Beji, G.A. Sukach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 118-120. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 61.10.Kw, 78.55.Cr, 78.55.Mb, 79.60.Dp https://nasplib.isofts.kiev.ua/handle/123456789/121575 Samples of p-type porous GaAs was obtained by electrochemical anodization of (100) oriented p-type GaAs. The formation of porous structure has been confirmed by Raman spectroscopy and scanning electron microscopy investigations. The low-frequency Raman shift of the peaks conditioned by the main optical phonons was observed in the Raman spectra of the porous GaAs. Estimation of the size of nanocryslallites in porous GaAs both by Raman shift and scanning electron microscopy gives approximately the same values and was about 10-20 nm. Photoluminescence investigations of porous GaAs exhibit the presence of two infrared and one visible bands. This work performed under the financial support of SFFI of Ukraine, grant 04.07/256. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Optical properties of p-type porous GaAs Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Optical properties of p-type porous GaAs |
| spellingShingle |
Optical properties of p-type porous GaAs Kidalov, V.V. Beji, L. Sukach, G.A. |
| title_short |
Optical properties of p-type porous GaAs |
| title_full |
Optical properties of p-type porous GaAs |
| title_fullStr |
Optical properties of p-type porous GaAs |
| title_full_unstemmed |
Optical properties of p-type porous GaAs |
| title_sort |
optical properties of p-type porous gaas |
| author |
Kidalov, V.V. Beji, L. Sukach, G.A. |
| author_facet |
Kidalov, V.V. Beji, L. Sukach, G.A. |
| publishDate |
2005 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Samples of p-type porous GaAs was obtained by electrochemical anodization of (100) oriented p-type GaAs. The formation of porous structure has been confirmed by Raman spectroscopy and scanning electron microscopy investigations. The low-frequency Raman shift of the peaks conditioned by the main optical phonons was observed in the Raman spectra of the porous GaAs. Estimation of the size of nanocryslallites in porous GaAs both by Raman shift and scanning electron microscopy gives approximately the same values and was about 10-20 nm. Photoluminescence investigations of porous GaAs exhibit the presence of two infrared and one visible bands.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121575 |
| citation_txt |
Optical properties of p-type porous GaAs / V.V. Kidalov, L. Beji, G.A. Sukach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 118-120. — Бібліогр.: 13 назв. — англ. |
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2025-12-07T13:21:27Z |
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2025-12-07T13:21:27Z |
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