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Optical properties of p-type porous GaAs

Samples of p-type porous GaAs was obtained by electrochemical anodization of (100) oriented p-type GaAs. The formation of porous structure has been confirmed by Raman spectroscopy and scanning electron microscopy investigations. The low-frequency Raman shift of the peaks conditioned by the main opti...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2005
Main Authors: Kidalov, V.V., Beji, L., Sukach, G.A.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/121575
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Optical properties of p-type porous GaAs / V.V. Kidalov, L. Beji, G.A. Sukach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 118-120. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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