Integration of LED/SC chips (matrix) in reverse mode with solar energy storage
In this work, for the first time we investigated controlling the quantum efficiencies of III-nitride LED/SC (solar cells) new energy accumulating elements and supercapacitors as energy storage devices (Enestors). It has been shown that the atomic content in these microenergetic devices gives large p...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Zitieren: | Integration of LED/SC chips (matrix) in reverse mode with solar energy storage / V.I. Osinsky, I.V. Masol, I. Kh. Feldman, A.V. Diagilev, N.O. Sukhovii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 215-219. — Бібліогр.: 7 назв. — англ. |
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Osinsky, V.I. Masol, I.V. Feldman, I.Kh. Diagilev, A.V. Sukhovii, N.O. 2017-06-14T17:06:11Z 2017-06-14T17:06:11Z 2016 Integration of LED/SC chips (matrix) in reverse mode with solar energy storage / V.I. Osinsky, I.V. Masol, I. Kh. Feldman, A.V. Diagilev, N.O. Sukhovii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 215-219. — Бібліогр.: 7 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.02.215 PACS 73.61.Ey, 85.50.Jb, 88.40.H- https://nasplib.isofts.kiev.ua/handle/123456789/121576 In this work, for the first time we investigated controlling the quantum efficiencies of III-nitride LED/SC (solar cells) new energy accumulating elements and supercapacitors as energy storage devices (Enestors). It has been shown that the atomic content in these microenergetic devices gives large possibilities for energy storage from solar light. The developed technique is promising to make ideal new functional LED, LD and SC with a high quantum efficiency and small leakage. This technology can be realized using Si/A³B⁵ integrated processor technology epitaxy with computer driving. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Integration of LED/SC chips (matrix) in reverse mode with solar energy storage Article published earlier |
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Integration of LED/SC chips (matrix) in reverse mode with solar energy storage |
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Integration of LED/SC chips (matrix) in reverse mode with solar energy storage Osinsky, V.I. Masol, I.V. Feldman, I.Kh. Diagilev, A.V. Sukhovii, N.O. |
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Integration of LED/SC chips (matrix) in reverse mode with solar energy storage |
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Integration of LED/SC chips (matrix) in reverse mode with solar energy storage |
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Integration of LED/SC chips (matrix) in reverse mode with solar energy storage |
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Integration of LED/SC chips (matrix) in reverse mode with solar energy storage |
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integration of led/sc chips (matrix) in reverse mode with solar energy storage |
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Osinsky, V.I. Masol, I.V. Feldman, I.Kh. Diagilev, A.V. Sukhovii, N.O. |
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Osinsky, V.I. Masol, I.V. Feldman, I.Kh. Diagilev, A.V. Sukhovii, N.O. |
| publishDate |
2016 |
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English |
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Semiconductor Physics Quantum Electronics & Optoelectronics |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Article |
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In this work, for the first time we investigated controlling the quantum efficiencies of III-nitride LED/SC (solar cells) new energy accumulating elements and supercapacitors as energy storage devices (Enestors). It has been shown that the atomic content in these microenergetic devices gives large possibilities for energy storage from solar light. The developed technique is promising to make ideal new functional LED, LD and SC with a high quantum efficiency and small leakage. This technology can be realized using Si/A³B⁵ integrated processor technology epitaxy with computer driving.
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1560-8034 |
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https://nasplib.isofts.kiev.ua/handle/123456789/121576 |
| citation_txt |
Integration of LED/SC chips (matrix) in reverse mode with solar energy storage / V.I. Osinsky, I.V. Masol, I. Kh. Feldman, A.V. Diagilev, N.O. Sukhovii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 215-219. — Бібліогр.: 7 назв. — англ. |
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2025-11-25T23:46:38Z |
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2025-11-25T23:46:38Z |
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1850583701319057408 |
| fulltext |
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V. 19, N 2. P. 215-219.
doi: 10.15407/spqeo19.02.215
© 2016, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
215
PACS 73.61.Ey, 85.50.Jb, 88.40.H-
Integration of LED/SC chips (matrix) in reverse mode
with solar energy storage
V.I. Osinsky1, I.V. Masol2, I. Kh. Feldman2, A.V. Diagilev3, N.O. Sukhovii1
1Institute of Microdevices, Kyiv, Ukraine; e-mail: osinsky@imd.org.ua; diagilev.av@gmail.com
2Rostok Co, Kyiv, Ukraine
3Kyiv Polytechnic Institute, Kyiv, Ukraine
Abstract. In this work, for the first time we investigated controlling the quantum
efficiencies of III-nitride LED/SC (solar cells) new energy accumulating elements and
supercapacitors as energy storage devices (Enestors). It has been shown that the atomic
content in these microenergetic devices gives large possibilities for energy storage from
solar light. The developed technique is promising to make ideal new functional LED, LD
and SC with a high quantum efficiency and small leakage. This technology can be
realized using Si/A3B5 integrated processor technology epitaxy with computer driving.
Keywords: III-nitrides, reversible LED/SC, cation operation, supercapacitor, energy
storage.
Manuscript received 19.01.16; revised version received 01.04.16; accepted for
publication 08.06.16; published online 06.07.16.
1. Introduction
The most urgent problem in solid state lighting
technology based on III-nitride heterostructures is the
high reverses optoelectronic conversion of electron and
photon energy that can be accumulated.
We investigated novel LED heterostructures on
binary and multicomponent A3B5 compounds and their
solid solutions (SS) [1].
Nevertheless, all the commercially III-nitride LEDs
are now predominantly made on (0001) plane of
sapphire, SiC or Si substrates. This direction is polar,
which creates strong polarization-induced internal
electric field leading to a reduced overlap between the
electron and hole wavefunctions. In order to overcome
this problem, the growth of the III-nitride structure along
polar directions is preferable. But the growth along
nonpolar directions offers a number of advantages over
devices currently grown along the (0001) direction. In
this sense, it is interesting to grow III-nitride
heterostructure on III-oxide layer, for example, Al2O3 or
α-plane (AlGa)2O3 substrate instead of α-plane of
sapphire [2].
In this paper, we introduce elements for energy
accumulation (energy storage), which can be
characterized as energy memory and realized using
ferroelectric layers or semiconductor solid solutions
with the potential wells. In this research of hybrid
variant as accumulator was used supercapacitors –
electric double layer capacitors that by all their
parameters simulate solid energy storage devices that
are most suitable for monolithic integration. The most
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V. 19, N 2. P. 215-219.
doi: 10.15407/spqeo19.02.215
© 2016, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
216
Fig. 1. LED’s SC chips for lighting and Solar Cells Energy.
Fig. 2. Formation process of a double electric layer at the surfaces of the positive and negative electrodes, for example from
activated carbon.
acceptable for monolithic integration are silicon
substrates that are used in making drivers, solar cells
and controlling microprocessors. Fig. 1 shows a simple
scheme of a monolithic energy storage device, where
energy was received from the double purpose LEDs
based on SiC substrates that can also act as an
accumulation layer.
These devices require an in-depth understanding of
the specific application. It also involves numerous
tradeoffs and selection from a wide variety of possible
solutions, usage of analog circuits and microprocessors
to control operation of these devices.
2. Supercapacitor materials and device construction
Materials characterized by high reliability and durability
were applied in our own designed supercapacitors that
have capacitance 6.3 to 12.4 F.
For electrodes, activated carbon was subjected to
baking directly before electrolyte impregnation. Then
electrodes were placed in the plate volumes made of
stainless steel and were separated using a special wall
made of a thin porous heat-resistant membrane that was
produced by Nippon Kodoshi company.
As electrolyte, we applied solution of organic salts
in mix of organic solvents with the high dissolving
ability and a low volatility. The chosen electrolyte
composition enabled to obtain a higher output voltage of
electric double layer supercapacitors (2.1…2.5 V).
Case parts were made of heat-resistant polymers
based on polyester resins and duralumin. For hermetic
sealing, we used a compound based on epoxy-polyamide
resin that has a long pot life and low polymerization
temperature (18…25 °C). To improve operational
properties of supercapacitors, charge processes were
performed in stabilized training mode.
Practice has shown that the electric double layer
capacitors, made in 2012, to the present time (June 2016)
are almost unchanged and retain their performances.
3. Experimental results and their discussion
In order to investigate LED crystals in the reverse mode,
we used metal-ceramic packages to place them there
with thermocompression bonding (Fig. 3). Blue, green,
yellow and red LEDs were tested in the reverse mode as
photovoltaic cells. During our experiments with different
LEDs, we figured out that the best performance was
obtained using red and yellow chips (see Table).
We used a condensing lens to concentrate solar
emission on chips. The output current was increased up
to 2·102 times. We made LEDs matrix for accumulating
the energy specifically in Si/GaN/AlGaIn/GaInN chips
(see Fig. 3).
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V. 19, N 2. P. 215-219.
doi: 10.15407/spqeo19.02.215
© 2016, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
217
Fig 4. Schematic diagram of experimental model coupling LED matrix with energy storage.
Fig. 5. Charging and discharging processes in the tested supercapacitors.
Table. Comparing the output current and voltage values
at different irradiation LED structures.
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1 Red 621.02 1.50 0.030 5.2 2.10
2 Yellow 590.40 1.54 0.021 2.6 1.96
3 Green 517.8 1.45 0.006 1.2 2.56
4 Green 526.6 1.40 0.006 1.17 2.56
5 Blue 457.2 1.93 0.005 0.36 2.56
Fig. 3. LED matrix for harvesting solar energy.
The III-nitride semiconductors and their alloys are
direct bandgap semiconductors. The bandgap energy of
semiconductor is an important parameter that determines
its transport and optical properties as well as many other
phenomena. III-nitride semiconductors have a high
melting point, mechanical strength and chemical
stability. In addition, their strong bonding makes them
resistant to high-current electrical degradation and
radiation damage that is present in the active regions of
light emitting devices. These materials also possess good
thermal conductivity. III-nitride based devices can
operate at high temperatures as well as in hostile
environments [4, 5].
These properties of materials allow to concentrate
radiation to reach more power by using glass and
sapphire lenses without any risk of damage or
degradation of semiconductor properties.
On the schematic diagram (Fig. 4) shows two
photovoltaic matrix connected in parallel to
supercapacitor to reach a higher output power.
In general, for charging and discharging a
supercapacitor, there are two major options. One is the
charging or discharging at a constant cell voltage to
record the cell current change with time, and the other is
charging or discharging at a constant current to record
that cell voltage change with time [3].
We focused only on charging and discharging at a
constant current. All measurements were made at room
temperature and ambient pressure.
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V. 19, N 2. P. 215-219.
doi: 10.15407/spqeo19.02.215
© 2016, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
218
Fig. 6. If the energy source’s open-circuit voltage is higher than the supercapacitor one, then the supercapacitor requires
overvoltage protection using a shunt regulator [6].
Fig. 7. Emission and photovoltage spectrum of LED/SC, solar and lamp.
Before the charging starts, the supercapacitor is at
zero-charge state, that is, the voltage across the
supercapacitor is equal to zero [3].
Experimental data in Fig. 5, received from the
multimeter which was connected to computer via serial
interface (RS-232). Using this plot, we compared
capacitance and performance of our designed prototype
as well as industrial supercapacitors and batteries.
Prototype capacity is about 10 F. The second sample is
electric double layer capacitor (EDLC) that has
capacitance 3 F was overcharged from solar radiation
after 2 hours. Even this capacitance is sufficient to
supply analog circuits with OpAmp for protection
against overcharging (Fig. 6) or load balancing. It could
be implemented into integration circuits including
collection, accumulation and emission structures on a
single substrate. GaN, III-nitride heterostructures are
applicable for developing new generation of standalone
devices.
In this paper, we investigated the reversible
photosensitivity of LED heterostructures (see Fig. 7).
As the high-brightness LEDs are realized in the
direct-gap materials with a sharp boundary of light
absorption, their heterostructures have selective
sensitivity with its sharp suppression at longer
wavelengths than low-energy wing of the emission
spectrum, for which heterostructure material is mostly
transparent and the absorption of light in it does not
create electron-hole pairs for photocurrent [7].
4. Conclusion
We have developed hybrid integration of LED chips
with energy storage elements that were charged from
these LEDs in the reverse photovoltaic mode by solar
radiation. It has been ascertained that many parameters
of LED/SC modes can be stabilized using the Si
transistor or IC microprocessor that have produced on Si
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016. V. 19, N 2. P. 215-219.
doi: 10.15407/spqeo19.02.215
© 2016, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
219
substrate. LED light and energetic efficiencies were
110 lm/W and 45%, respectively. The experimental
technological investigation presented in this work shows
the way for monolithic integration that gives better
parameters and low cost of RGB LED sources.
References
1. I.V. Masol, V.I. Osinsky, О.T. Sergeev,
Informational Nanotechnologies. Macros, Kyiv,
2011 (in Russian).
2. V. Osinsky, O. Dyachenko, Crystal lattice
engineering the novel substrates for III-nitride-
oxide heterostructures // Semiconductor Physics,
Quantum Electronics & Optoelectronics, 13, No. 2,
p. 142-144 (2010).
3. S. Ban, J. Zhang, L. Zhang et al., Charging and
discharging electrochemical supercapacitors in the
presence of both parallel leakage process and
electrochemical decomposition of solvent //
Electrochimica Acta, 90, p. 542-549 (2013).
4. Ananta R. Acharya, Group III – Nitride
Semiconductors: Preeminent Materials for Modern
Electronic and Optoelectronic Applications // The
Himalayan Physics, 4(4), p. 22-26 (2013).
5. F.A. Ponce, and D.P. Bour, Nitride-based
semiconductors for blue and green light-emitting
devices // Nature, 386(6623), p. 351-359 (1997).
6. Pierre Mars, Coupling a Supercapacitor with a
Small Energy Harvesting Source // EE Times
Design. http://www.cap-xx.com April, 2014.
7. P. Deminskiy, Selective photosensitivity of
integrated RGB and white light sources in reverse
mode // in book: Electronics and communications,
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(2011).
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