Excitons and trions in spherical semiconductor quantum dots
An original iterative procedure has been developed to obtain energy spectrum of neutral and charged excitons (positive and negative trions) in spherical semiconductor quantum dots (QD) imbedded into a dielectric material. Numerical calculations are made using the effective mass approximation and Har...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2006 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121578 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Excitons and trions in spherical semiconductor quantum dots / I.M. Kupchak, Yu.V. Kryuchenko, D.V. Korbutyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 1-8. — Бібліогр.: 32 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862750247272316928 |
|---|---|
| author | Kupchak, I.M. Kryuchenko, Yu.V. Korbutyak, D.V. |
| author_facet | Kupchak, I.M. Kryuchenko, Yu.V. Korbutyak, D.V. |
| citation_txt | Excitons and trions in spherical semiconductor quantum dots / I.M. Kupchak, Yu.V. Kryuchenko, D.V. Korbutyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 1-8. — Бібліогр.: 32 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | An original iterative procedure has been developed to obtain energy spectrum of neutral and charged excitons (positive and negative trions) in spherical semiconductor quantum dots (QD) imbedded into a dielectric material. Numerical calculations are made using the effective mass approximation and Hartree-Fock method. A combined effect of heterointerface polarization (image force potential) and finite band-off-sets on the energy spectrum of excitons and trions in QDs is considered for the first time. It is shown that binding energies of excitons and trions in such QDs can be substantially larger than those in bulk semiconductors due to spatial and “dielectric” confinement effects.
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| first_indexed | 2025-12-07T21:04:53Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121578 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T21:04:53Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kupchak, I.M. Kryuchenko, Yu.V. Korbutyak, D.V. 2017-06-14T17:09:39Z 2017-06-14T17:09:39Z 2006 Excitons and trions in spherical semiconductor quantum dots / I.M. Kupchak, Yu.V. Kryuchenko, D.V. Korbutyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 1-8. — Бібліогр.: 32 назв. — англ. 1560-8034 PACS 71.35.Pq, 71.35.-y https://nasplib.isofts.kiev.ua/handle/123456789/121578 An original iterative procedure has been developed to obtain energy spectrum of neutral and charged excitons (positive and negative trions) in spherical semiconductor quantum dots (QD) imbedded into a dielectric material. Numerical calculations are made using the effective mass approximation and Hartree-Fock method. A combined effect of heterointerface polarization (image force potential) and finite band-off-sets on the energy spectrum of excitons and trions in QDs is considered for the first time. It is shown that binding energies of excitons and trions in such QDs can be substantially larger than those in bulk semiconductors due to spatial and “dielectric” confinement effects. This work was supported in part by State Fundamental
 Researches Foundation of Ukraine, Russian-Ukrainian
 Program “Nanophysics and Nanoelectronics” and
 Program “Nanostructured Systems, Nanomaterials and
 Nanotechnologies” NAS of Ukraine. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Excitons and trions in spherical semiconductor quantum dots Article published earlier |
| spellingShingle | Excitons and trions in spherical semiconductor quantum dots Kupchak, I.M. Kryuchenko, Yu.V. Korbutyak, D.V. |
| title | Excitons and trions in spherical semiconductor quantum dots |
| title_full | Excitons and trions in spherical semiconductor quantum dots |
| title_fullStr | Excitons and trions in spherical semiconductor quantum dots |
| title_full_unstemmed | Excitons and trions in spherical semiconductor quantum dots |
| title_short | Excitons and trions in spherical semiconductor quantum dots |
| title_sort | excitons and trions in spherical semiconductor quantum dots |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121578 |
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