Excitons and trions in spherical semiconductor quantum dots

An original iterative procedure has been developed to obtain energy spectrum of neutral and charged excitons (positive and negative trions) in spherical semiconductor quantum dots (QD) imbedded into a dielectric material. Numerical calculations are made using the effective mass approximation and Har...

Повний опис

Збережено в:
Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2006
Автори: Kupchak, I.M., Kryuchenko, Yu.V., Korbutyak, D.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121578
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Excitons and trions in spherical semiconductor quantum dots / I.M. Kupchak, Yu.V. Kryuchenko, D.V. Korbutyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 1-8. — Бібліогр.: 32 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121578
record_format dspace
spelling Kupchak, I.M.
Kryuchenko, Yu.V.
Korbutyak, D.V.
2017-06-14T17:09:39Z
2017-06-14T17:09:39Z
2006
Excitons and trions in spherical semiconductor quantum dots / I.M. Kupchak, Yu.V. Kryuchenko, D.V. Korbutyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 1-8. — Бібліогр.: 32 назв. — англ.
1560-8034
PACS 71.35.Pq, 71.35.-y
https://nasplib.isofts.kiev.ua/handle/123456789/121578
An original iterative procedure has been developed to obtain energy spectrum of neutral and charged excitons (positive and negative trions) in spherical semiconductor quantum dots (QD) imbedded into a dielectric material. Numerical calculations are made using the effective mass approximation and Hartree-Fock method. A combined effect of heterointerface polarization (image force potential) and finite band-off-sets on the energy spectrum of excitons and trions in QDs is considered for the first time. It is shown that binding energies of excitons and trions in such QDs can be substantially larger than those in bulk semiconductors due to spatial and “dielectric” confinement effects.
This work was supported in part by State Fundamental Researches Foundation of Ukraine, Russian-Ukrainian Program “Nanophysics and Nanoelectronics” and Program “Nanostructured Systems, Nanomaterials and Nanotechnologies” NAS of Ukraine.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Excitons and trions in spherical semiconductor quantum dots
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Excitons and trions in spherical semiconductor quantum dots
spellingShingle Excitons and trions in spherical semiconductor quantum dots
Kupchak, I.M.
Kryuchenko, Yu.V.
Korbutyak, D.V.
title_short Excitons and trions in spherical semiconductor quantum dots
title_full Excitons and trions in spherical semiconductor quantum dots
title_fullStr Excitons and trions in spherical semiconductor quantum dots
title_full_unstemmed Excitons and trions in spherical semiconductor quantum dots
title_sort excitons and trions in spherical semiconductor quantum dots
author Kupchak, I.M.
Kryuchenko, Yu.V.
Korbutyak, D.V.
author_facet Kupchak, I.M.
Kryuchenko, Yu.V.
Korbutyak, D.V.
publishDate 2006
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description An original iterative procedure has been developed to obtain energy spectrum of neutral and charged excitons (positive and negative trions) in spherical semiconductor quantum dots (QD) imbedded into a dielectric material. Numerical calculations are made using the effective mass approximation and Hartree-Fock method. A combined effect of heterointerface polarization (image force potential) and finite band-off-sets on the energy spectrum of excitons and trions in QDs is considered for the first time. It is shown that binding energies of excitons and trions in such QDs can be substantially larger than those in bulk semiconductors due to spatial and “dielectric” confinement effects.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121578
citation_txt Excitons and trions in spherical semiconductor quantum dots / I.M. Kupchak, Yu.V. Kryuchenko, D.V. Korbutyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 1-8. — Бібліогр.: 32 назв. — англ.
work_keys_str_mv AT kupchakim excitonsandtrionsinsphericalsemiconductorquantumdots
AT kryuchenkoyuv excitonsandtrionsinsphericalsemiconductorquantumdots
AT korbutyakdv excitonsandtrionsinsphericalsemiconductorquantumdots
first_indexed 2025-12-07T21:04:53Z
last_indexed 2025-12-07T21:04:53Z
_version_ 1850885007121317888