Excitons and trions in spherical semiconductor quantum dots
An original iterative procedure has been developed to obtain energy spectrum of neutral and charged excitons (positive and negative trions) in spherical semiconductor quantum dots (QD) imbedded into a dielectric material. Numerical calculations are made using the effective mass approximation and Har...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2006 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121578 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Excitons and trions in spherical semiconductor quantum dots / I.M. Kupchak, Yu.V. Kryuchenko, D.V. Korbutyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 1-8. — Бібліогр.: 32 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121578 |
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Kupchak, I.M. Kryuchenko, Yu.V. Korbutyak, D.V. 2017-06-14T17:09:39Z 2017-06-14T17:09:39Z 2006 Excitons and trions in spherical semiconductor quantum dots / I.M. Kupchak, Yu.V. Kryuchenko, D.V. Korbutyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 1-8. — Бібліогр.: 32 назв. — англ. 1560-8034 PACS 71.35.Pq, 71.35.-y https://nasplib.isofts.kiev.ua/handle/123456789/121578 An original iterative procedure has been developed to obtain energy spectrum of neutral and charged excitons (positive and negative trions) in spherical semiconductor quantum dots (QD) imbedded into a dielectric material. Numerical calculations are made using the effective mass approximation and Hartree-Fock method. A combined effect of heterointerface polarization (image force potential) and finite band-off-sets on the energy spectrum of excitons and trions in QDs is considered for the first time. It is shown that binding energies of excitons and trions in such QDs can be substantially larger than those in bulk semiconductors due to spatial and “dielectric” confinement effects. This work was supported in part by State Fundamental Researches Foundation of Ukraine, Russian-Ukrainian Program “Nanophysics and Nanoelectronics” and Program “Nanostructured Systems, Nanomaterials and Nanotechnologies” NAS of Ukraine. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Excitons and trions in spherical semiconductor quantum dots Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| title |
Excitons and trions in spherical semiconductor quantum dots |
| spellingShingle |
Excitons and trions in spherical semiconductor quantum dots Kupchak, I.M. Kryuchenko, Yu.V. Korbutyak, D.V. |
| title_short |
Excitons and trions in spherical semiconductor quantum dots |
| title_full |
Excitons and trions in spherical semiconductor quantum dots |
| title_fullStr |
Excitons and trions in spherical semiconductor quantum dots |
| title_full_unstemmed |
Excitons and trions in spherical semiconductor quantum dots |
| title_sort |
excitons and trions in spherical semiconductor quantum dots |
| author |
Kupchak, I.M. Kryuchenko, Yu.V. Korbutyak, D.V. |
| author_facet |
Kupchak, I.M. Kryuchenko, Yu.V. Korbutyak, D.V. |
| publishDate |
2006 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
An original iterative procedure has been developed to obtain energy spectrum of neutral and charged excitons (positive and negative trions) in spherical semiconductor quantum dots (QD) imbedded into a dielectric material. Numerical calculations are made using the effective mass approximation and Hartree-Fock method. A combined effect of heterointerface polarization (image force potential) and finite band-off-sets on the energy spectrum of excitons and trions in QDs is considered for the first time. It is shown that binding energies of excitons and trions in such QDs can be substantially larger than those in bulk semiconductors due to spatial and “dielectric” confinement effects.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121578 |
| citation_txt |
Excitons and trions in spherical semiconductor quantum dots / I.M. Kupchak, Yu.V. Kryuchenko, D.V. Korbutyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 1-8. — Бібліогр.: 32 назв. — англ. |
| work_keys_str_mv |
AT kupchakim excitonsandtrionsinsphericalsemiconductorquantumdots AT kryuchenkoyuv excitonsandtrionsinsphericalsemiconductorquantumdots AT korbutyakdv excitonsandtrionsinsphericalsemiconductorquantumdots |
| first_indexed |
2025-12-07T21:04:53Z |
| last_indexed |
2025-12-07T21:04:53Z |
| _version_ |
1850885007121317888 |