Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase
Influence of strains that appear in GaSb/InAs heterosystem on heteroepitaxial layer planarity is considered. It is shown that minimal supercooling of solution-melt at the saturation temperature of gallium antimonide in gallium melt 450 ºC is 7.8 ºС for [111] and 5.8 ºС for [100] growth directions. C...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2006 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121579 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase / S.V. Shutov, Ye.A. Baganov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 84-87. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121579 |
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dspace |
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Shutov, S.V. Baganov, Ye.A. 2017-06-14T17:10:12Z 2017-06-14T17:10:12Z 2006 Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase / S.V. Shutov, Ye.A. Baganov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 84-87. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 81.05.Ea, 81.15.Lm https://nasplib.isofts.kiev.ua/handle/123456789/121579 Influence of strains that appear in GaSb/InAs heterosystem on heteroepitaxial layer planarity is considered. It is shown that minimal supercooling of solution-melt at the saturation temperature of gallium antimonide in gallium melt 450 ºC is 7.8 ºС for [111] and 5.8 ºС for [100] growth directions. Calculated are the minimal growth rate 22 nm/s that is necessary for prevention of distortion appearance of epitaxial layer surface caused by elastic strains and the critical thicknesses of misfit dislocation formation – 50 and 54 nm for the [100] and [111] growth directions, respectively. It is shown experimentally that the lack of minimal supercooling leads to the island growth mode. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase |
| spellingShingle |
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase Shutov, S.V. Baganov, Ye.A. |
| title_short |
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase |
| title_full |
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase |
| title_fullStr |
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase |
| title_full_unstemmed |
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase |
| title_sort |
elastic strains influence during gasb/inas heteroepitaxy from liquid phase |
| author |
Shutov, S.V. Baganov, Ye.A. |
| author_facet |
Shutov, S.V. Baganov, Ye.A. |
| publishDate |
2006 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Influence of strains that appear in GaSb/InAs heterosystem on heteroepitaxial layer planarity is considered. It is shown that minimal supercooling of solution-melt at the saturation temperature of gallium antimonide in gallium melt 450 ºC is 7.8 ºС for [111] and 5.8 ºС for [100] growth directions. Calculated are the minimal growth rate 22 nm/s that is necessary for prevention of distortion appearance of epitaxial layer surface caused by elastic strains and the critical thicknesses of misfit dislocation formation – 50 and 54 nm for the [100] and [111] growth directions, respectively. It is shown experimentally that the lack of minimal supercooling leads to the island growth mode.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121579 |
| citation_txt |
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase / S.V. Shutov, Ye.A. Baganov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 84-87. — Бібліогр.: 17 назв. — англ. |
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AT shutovsv elasticstrainsinfluenceduringgasbinasheteroepitaxyfromliquidphase AT baganovyea elasticstrainsinfluenceduringgasbinasheteroepitaxyfromliquidphase |
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2025-12-07T17:56:03Z |
| last_indexed |
2025-12-07T17:56:03Z |
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