Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2006
• Main Authors: Shutov, S.V., Baganov, Ye.A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121579
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase / S.V. Shutov, Ye.A. Baganov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 84-87. — Бібліогр.: 17 назв. — англ.

Influence of strains that appear in GaSb/InAs heterosystem on heteroepitaxial layer planarity is considered. It is shown that minimal supercooling of solution-melt at the saturation temperature of gallium antimonide in gallium melt 450 ºC is 7.8 ºС for [111] and 5.8 ºС for [100] growth directions. C...