Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films
Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiOx layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si nanocrystals (nc-Si-SiOx) after plasma treatment is observed. The process satur...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2006 |
| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121580 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films / I.Z. Indutnyy, V.S. Lysenko, I.Yu. Maidanchuk, V.I. Min'ko, A.N. Nazarov, A.S. Tkachenko, P.E. Shepeliavyi, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 9-13. — Бібліогр.: 18 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862631291792392192 |
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| author | Indutnyy, I.Z. Lysenko, V.S. Min'ko, V.I. Nazarov, A.N. Tkachenko, A.S. Shepeliavyi, P.E. Dan'ko, V.A. Maidanchuk, I.Yu. |
| author_facet | Indutnyy, I.Z. Lysenko, V.S. Min'ko, V.I. Nazarov, A.N. Tkachenko, A.S. Shepeliavyi, P.E. Dan'ko, V.A. Maidanchuk, I.Yu. |
| citation_txt | Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films / I.Z. Indutnyy, V.S. Lysenko, I.Yu. Maidanchuk, V.I. Min'ko, A.N. Nazarov, A.S. Tkachenko, P.E. Shepeliavyi, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 9-13. — Бібліогр.: 18 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiOx layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si nanocrystals (nc-Si-SiOx) after plasma treatment is observed. The process saturates for time of 15 minutes. Chemical treatment in ammonia and acetone vapour before thermal annealing of SiOx layers leads to the considerable changes in PL spectra effecting both on the band shape and on the intensity. The possibility of controlled changes in PL spectra in nc-Si-SiO₂ layers is shown.
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| first_indexed | 2025-11-30T11:06:06Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121580 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T11:06:06Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Indutnyy, I.Z. Lysenko, V.S. Min'ko, V.I. Nazarov, A.N. Tkachenko, A.S. Shepeliavyi, P.E. Dan'ko, V.A. Maidanchuk, I.Yu. 2017-06-14T17:12:09Z 2017-06-14T17:12:09Z 2006 Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films / I.Z. Indutnyy, V.S. Lysenko, I.Yu. Maidanchuk, V.I. Min'ko, A.N. Nazarov, A.S. Tkachenko, P.E. Shepeliavyi, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 9-13. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 78.66.Jg https://nasplib.isofts.kiev.ua/handle/123456789/121580 Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiOx layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si nanocrystals (nc-Si-SiOx) after plasma treatment is observed. The process saturates for time of 15 minutes. Chemical treatment in ammonia and acetone vapour before thermal annealing of SiOx layers leads to the considerable changes in PL spectra effecting both on the band shape and on the intensity. The possibility of controlled changes in PL spectra in nc-Si-SiO₂ layers is shown. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films Article published earlier |
| spellingShingle | Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films Indutnyy, I.Z. Lysenko, V.S. Min'ko, V.I. Nazarov, A.N. Tkachenko, A.S. Shepeliavyi, P.E. Dan'ko, V.A. Maidanchuk, I.Yu. |
| title | Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films |
| title_full | Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films |
| title_fullStr | Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films |
| title_full_unstemmed | Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films |
| title_short | Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films |
| title_sort | effect of chemical and radiofrequency plasma treatment on photoluminescence of siox films |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121580 |
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