Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films
Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiOx layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si nanocrystals (nc-Si-SiOx) after plasma treatment is observed. The process satur...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2006 |
| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121580 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films / I.Z. Indutnyy, V.S. Lysenko, I.Yu. Maidanchuk, V.I. Min'ko, A.N. Nazarov, A.S. Tkachenko, P.E. Shepeliavyi, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 8, № 1. — С. 9-13. — Бібліогр.: 18 назв. — англ. |