Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect
In the framework of the one-dimension field model of semiconductor simultaneosly subjected to the action of carrier-warming electric field and two quasi-monochromatic light waves the authors have numerically calculated the spatial-temporal distributions of inner electric field Е(x,τ) and conductivit...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2006 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121587 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect / P.M. Gorley, P.P. Horley, S.M. Chupyra // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 93-96. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862740800115310592 |
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| author | Gorley, P.M. Horley, P.P. Chupyra, S.M. |
| author_facet | Gorley, P.M. Horley, P.P. Chupyra, S.M. |
| citation_txt | Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect / P.M. Gorley, P.P. Horley, S.M. Chupyra // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 93-96. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In the framework of the one-dimension field model of semiconductor simultaneosly subjected to the action of carrier-warming electric field and two quasi-monochromatic light waves the authors have numerically calculated the spatial-temporal distributions of inner electric field Е(x,τ) and conductivity band electrons n(x,τ) in dependence on external control parameters (intensity of the incident light waves, their wave vector, external electric field and doping impurity concentration). It was found that the device operating on the base of photorefractive Gunn effect may be controllably switched between three following operation modes: low- and high-light wave intensity as well as a transition mode. The influence of the external control parameters on the Е(x,τ) distribution was determined for each mode in question. It was shown that one could efficiently control the refractive index increment nΔ by means of proper change of the control parameters.
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| first_indexed | 2025-12-07T20:16:43Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121587 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:16:43Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gorley, P.M. Horley, P.P. Chupyra, S.M. 2017-06-14T17:21:41Z 2017-06-14T17:21:41Z 2006 Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect / P.M. Gorley, P.P. Horley, S.M. Chupyra // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 93-96. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 85.30.Fg, 42.70.Nq, 42.65.Sf https://nasplib.isofts.kiev.ua/handle/123456789/121587 In the framework of the one-dimension field model of semiconductor simultaneosly subjected to the action of carrier-warming electric field and two quasi-monochromatic light waves the authors have numerically calculated the spatial-temporal distributions of inner electric field Е(x,τ) and conductivity band electrons n(x,τ) in dependence on external control parameters (intensity of the incident light waves, their wave vector, external electric field and doping impurity concentration). It was found that the device operating on the base of photorefractive Gunn effect may be controllably switched between three following operation modes: low- and high-light wave intensity as well as a transition mode. The influence of the external control parameters on the Е(x,τ) distribution was determined for each mode in question. It was shown that one could efficiently control the refractive index increment nΔ by means of proper change of the control parameters. This investigation was performed in the framework
 of the research project GP/F11/0036 (Grant of the
 President of Ukraine for the support of research work of
 young scientists, 2006). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect Article published earlier |
| spellingShingle | Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect Gorley, P.M. Horley, P.P. Chupyra, S.M. |
| title | Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect |
| title_full | Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect |
| title_fullStr | Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect |
| title_full_unstemmed | Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect |
| title_short | Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect |
| title_sort | electric field and carrier concentration distributions in the semiconductor under photorefractive gunn effect |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121587 |
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