Microwave irradiation of gallium arsenide
To study an influence of the microwave irradiation on a spectrum of defect states in semiconductor compound GaAs, we used measurements of luminescence spectra within the range 0.5 to 2.04 eV at 77 К before and after long (up to 13 min) treatments in air in the operation chamber of a magnetron at the...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2006 |
| Main Author: | |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121588 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Microwave irradiation of gallium arsenide / R. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 97-98. — Бібліогр.: 4 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862730789730385920 |
|---|---|
| author | Red'ko, R. |
| author_facet | Red'ko, R. |
| citation_txt | Microwave irradiation of gallium arsenide / R. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 97-98. — Бібліогр.: 4 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | To study an influence of the microwave irradiation on a spectrum of defect states in semiconductor compound GaAs, we used measurements of luminescence spectra within the range 0.5 to 2.04 eV at 77 К before and after long (up to 13 min) treatments in air in the operation chamber of a magnetron at the frequency 2.45 GHz and surface power density 7.5 W/cm2. It was obtained that, already on the smallest irradiation exposure, the spectra of defects in researched samples essentially changed as well as concentrations of local centers changed. A "transfer" of intensity from the band with the peak 1.04 eV to the that peaking at 1.3 eV was observed.
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| first_indexed | 2025-12-07T19:22:17Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121588 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:22:17Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Red'ko, R. 2017-06-14T17:22:14Z 2017-06-14T17:22:14Z 2006 Microwave irradiation of gallium arsenide / R. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 97-98. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS 71.55.-I, 61.72.-y https://nasplib.isofts.kiev.ua/handle/123456789/121588 To study an influence of the microwave irradiation on a spectrum of defect states in semiconductor compound GaAs, we used measurements of luminescence spectra within the range 0.5 to 2.04 eV at 77 К before and after long (up to 13 min) treatments in air in the operation chamber of a magnetron at the frequency 2.45 GHz and surface power density 7.5 W/cm2. It was obtained that, already on the smallest irradiation exposure, the spectra of defects in researched samples essentially changed as well as concentrations of local centers changed. A "transfer" of intensity from the band with the peak 1.04 eV to the that peaking at 1.3 eV was observed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Microwave irradiation of gallium arsenide Article published earlier |
| spellingShingle | Microwave irradiation of gallium arsenide Red'ko, R. |
| title | Microwave irradiation of gallium arsenide |
| title_full | Microwave irradiation of gallium arsenide |
| title_fullStr | Microwave irradiation of gallium arsenide |
| title_full_unstemmed | Microwave irradiation of gallium arsenide |
| title_short | Microwave irradiation of gallium arsenide |
| title_sort | microwave irradiation of gallium arsenide |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121588 |
| work_keys_str_mv | AT redkor microwaveirradiationofgalliumarsenide |