Microwave irradiation of gallium arsenide

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2006
• Main Author: Red'ko, R.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121588
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Microwave irradiation of gallium arsenide / R. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 97-98. — Бібліогр.: 4 назв. — англ.

To study an influence of the microwave irradiation on a spectrum of defect states in semiconductor compound GaAs, we used measurements of luminescence spectra within the range 0.5 to 2.04 eV at 77 К before and after long (up to 13 min) treatments in air in the operation chamber of a magnetron at the...