Photoresponse in Ge/Si nanostructures with quantum dots

Photovoltaic properties of Si samples with Ge quantum dots were studied. Photosensitivity spectra and current-voltage characteristics at 90 and 290 K were investigated. Negative photoconductivity of samples was revealed in the spectral range of 0.6 to 1.1 eV. Irregular temperature dependence of phot...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2006
Автори: Nikolenko, A.S., Kondratenko, S.V., Vakulenko, O.V.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121590
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Photoresponse in Ge/Si nanostructures with quantum dots / A.S. Nikolenko, S.V. Kondratenko, O.V. Vakulenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 32-35. — Бібліогр.: 21 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Nikolenko, A.S.
Kondratenko, S.V.
Vakulenko, O.V.
author_facet Nikolenko, A.S.
Kondratenko, S.V.
Vakulenko, O.V.
citation_txt Photoresponse in Ge/Si nanostructures with quantum dots / A.S. Nikolenko, S.V. Kondratenko, O.V. Vakulenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 32-35. — Бібліогр.: 21 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Photovoltaic properties of Si samples with Ge quantum dots were studied. Photosensitivity spectra and current-voltage characteristics at 90 and 290 K were investigated. Negative photoconductivity of samples was revealed in the spectral range of 0.6 to 1.1 eV. Irregular temperature dependence of photo-emf in the temperature interval from 100 to 250 K was measured and analyzed.
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publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Nikolenko, A.S.
Kondratenko, S.V.
Vakulenko, O.V.
2017-06-14T17:23:27Z
2017-06-14T17:23:27Z
2006
Photoresponse in Ge/Si nanostructures with quantum dots / A.S. Nikolenko, S.V. Kondratenko, O.V. Vakulenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 32-35. — Бібліогр.: 21 назв. — англ.
1560-8034
PACS 73.63.-8, 73.63.Kv
https://nasplib.isofts.kiev.ua/handle/123456789/121590
Photovoltaic properties of Si samples with Ge quantum dots were studied. Photosensitivity spectra and current-voltage characteristics at 90 and 290 K were investigated. Negative photoconductivity of samples was revealed in the spectral range of 0.6 to 1.1 eV. Irregular temperature dependence of photo-emf in the temperature interval from 100 to 250 K was measured and analyzed.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Photoresponse in Ge/Si nanostructures with quantum dots
Article
published earlier
spellingShingle Photoresponse in Ge/Si nanostructures with quantum dots
Nikolenko, A.S.
Kondratenko, S.V.
Vakulenko, O.V.
title Photoresponse in Ge/Si nanostructures with quantum dots
title_full Photoresponse in Ge/Si nanostructures with quantum dots
title_fullStr Photoresponse in Ge/Si nanostructures with quantum dots
title_full_unstemmed Photoresponse in Ge/Si nanostructures with quantum dots
title_short Photoresponse in Ge/Si nanostructures with quantum dots
title_sort photoresponse in ge/si nanostructures with quantum dots
url https://nasplib.isofts.kiev.ua/handle/123456789/121590
work_keys_str_mv AT nikolenkoas photoresponseingesinanostructureswithquantumdots
AT kondratenkosv photoresponseingesinanostructureswithquantumdots
AT vakulenkoov photoresponseingesinanostructureswithquantumdots