Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group
Presented here are the results of studying the controlled doping with elements of V group of the periodic table, arsenic As and antimony Sb, of narrow gap CdxHg₁₋xTe epitaxial layers during the isothermal growth from the vapour phase by the evaporation-condensation-diffusion method. Three types of i...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2006 |
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121591 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group / A.P. Vlasov, A.Yu. Bonchyk, I.M. Fodchuk, R.A. Zaplitnyy, A. Barcz, Z.T. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 36-42. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862730386477416448 |
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| author | Vlasov, A.P. Bonchyk, A.Yu. Fodchuk, I.M. Barcz, A. Swiatek, Z.T. Zaplitnyy, R.A. |
| author_facet | Vlasov, A.P. Bonchyk, A.Yu. Fodchuk, I.M. Barcz, A. Swiatek, Z.T. Zaplitnyy, R.A. |
| citation_txt | Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group / A.P. Vlasov, A.Yu. Bonchyk, I.M. Fodchuk, R.A. Zaplitnyy, A. Barcz, Z.T. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 36-42. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Presented here are the results of studying the controlled doping with elements of V group of the periodic table, arsenic As and antimony Sb, of narrow gap CdxHg₁₋xTe epitaxial layers during the isothermal growth from the vapour phase by the evaporation-condensation-diffusion method. Three types of impurity sources have been used for solid state doping: homogeneously doped with As(Sb) single crystal substrates of CdTe, As doped buffer CdyHg₁₋yTe (y > x) epitaxial layers obtained by RF sputtering in mercury glow discharge onto undoped CdTe substrates, and As(Sb) implanted undoped CdTe substrates. The results of comparative analysis of galvano-magnetic measurements and SIMS spectra indicated very high, practically nearly ~100 %, electrical activity of dopants in the CdxHg₁₋xTe epitaxially grown layers.
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| first_indexed | 2025-12-07T19:19:56Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121591 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:19:56Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vlasov, A.P. Bonchyk, A.Yu. Fodchuk, I.M. Barcz, A. Swiatek, Z.T. Zaplitnyy, R.A. 2017-06-14T17:24:50Z 2017-06-14T17:24:50Z 2006 Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group / A.P. Vlasov, A.Yu. Bonchyk, I.M. Fodchuk, R.A. Zaplitnyy, A. Barcz, Z.T. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 36-42. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 61.72.V; 72.80.E https://nasplib.isofts.kiev.ua/handle/123456789/121591 Presented here are the results of studying the controlled doping with elements of V group of the periodic table, arsenic As and antimony Sb, of narrow gap CdxHg₁₋xTe epitaxial layers during the isothermal growth from the vapour phase by the evaporation-condensation-diffusion method. Three types of impurity sources have been used for solid state doping: homogeneously doped with As(Sb) single crystal substrates of CdTe, As doped buffer CdyHg₁₋yTe (y > x) epitaxial layers obtained by RF sputtering in mercury glow discharge onto undoped CdTe substrates, and As(Sb) implanted undoped CdTe substrates. The results of comparative analysis of galvano-magnetic measurements and SIMS spectra indicated very high, practically nearly ~100 %, electrical activity of dopants in the CdxHg₁₋xTe epitaxially grown layers. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group Article published earlier |
| spellingShingle | Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group Vlasov, A.P. Bonchyk, A.Yu. Fodchuk, I.M. Barcz, A. Swiatek, Z.T. Zaplitnyy, R.A. |
| title | Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group |
| title_full | Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group |
| title_fullStr | Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group |
| title_full_unstemmed | Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group |
| title_short | Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group |
| title_sort | solid state doping of cdxhg₁₋xte epitaxial layers with elements of v group |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121591 |
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