Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group
Presented here are the results of studying the controlled doping with elements of V group of the periodic table, arsenic As and antimony Sb, of narrow gap CdxHg₁₋xTe epitaxial layers during the isothermal growth from the vapour phase by the evaporation-condensation-diffusion method. Three types of i...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2006 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121591 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group / A.P. Vlasov, A.Yu. Bonchyk, I.M. Fodchuk, R.A. Zaplitnyy, A. Barcz, Z.T. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 36-42. — Бібліогр.: 15 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121591 |
|---|---|
| record_format |
dspace |
| spelling |
Vlasov, A.P. Bonchyk, A.Yu. Fodchuk, I.M. Barcz, A. Swiatek, Z.T. Zaplitnyy, R.A. 2017-06-14T17:24:50Z 2017-06-14T17:24:50Z 2006 Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group / A.P. Vlasov, A.Yu. Bonchyk, I.M. Fodchuk, R.A. Zaplitnyy, A. Barcz, Z.T. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 36-42. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 61.72.V; 72.80.E https://nasplib.isofts.kiev.ua/handle/123456789/121591 Presented here are the results of studying the controlled doping with elements of V group of the periodic table, arsenic As and antimony Sb, of narrow gap CdxHg₁₋xTe epitaxial layers during the isothermal growth from the vapour phase by the evaporation-condensation-diffusion method. Three types of impurity sources have been used for solid state doping: homogeneously doped with As(Sb) single crystal substrates of CdTe, As doped buffer CdyHg₁₋yTe (y > x) epitaxial layers obtained by RF sputtering in mercury glow discharge onto undoped CdTe substrates, and As(Sb) implanted undoped CdTe substrates. The results of comparative analysis of galvano-magnetic measurements and SIMS spectra indicated very high, practically nearly ~100 %, electrical activity of dopants in the CdxHg₁₋xTe epitaxially grown layers. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group |
| spellingShingle |
Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group Vlasov, A.P. Bonchyk, A.Yu. Fodchuk, I.M. Barcz, A. Swiatek, Z.T. Zaplitnyy, R.A. |
| title_short |
Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group |
| title_full |
Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group |
| title_fullStr |
Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group |
| title_full_unstemmed |
Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group |
| title_sort |
solid state doping of cdxhg₁₋xte epitaxial layers with elements of v group |
| author |
Vlasov, A.P. Bonchyk, A.Yu. Fodchuk, I.M. Barcz, A. Swiatek, Z.T. Zaplitnyy, R.A. |
| author_facet |
Vlasov, A.P. Bonchyk, A.Yu. Fodchuk, I.M. Barcz, A. Swiatek, Z.T. Zaplitnyy, R.A. |
| publishDate |
2006 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Presented here are the results of studying the controlled doping with elements of V group of the periodic table, arsenic As and antimony Sb, of narrow gap CdxHg₁₋xTe epitaxial layers during the isothermal growth from the vapour phase by the evaporation-condensation-diffusion method. Three types of impurity sources have been used for solid state doping: homogeneously doped with As(Sb) single crystal substrates of CdTe, As doped buffer CdyHg₁₋yTe (y > x) epitaxial layers obtained by RF sputtering in mercury glow discharge onto undoped CdTe substrates, and As(Sb) implanted undoped CdTe substrates. The results of comparative analysis of galvano-magnetic measurements and SIMS spectra indicated very high, practically nearly ~100 %, electrical activity of dopants in the CdxHg₁₋xTe epitaxially grown layers.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121591 |
| citation_txt |
Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group / A.P. Vlasov, A.Yu. Bonchyk, I.M. Fodchuk, R.A. Zaplitnyy, A. Barcz, Z.T. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 36-42. — Бібліогр.: 15 назв. — англ. |
| work_keys_str_mv |
AT vlasovap solidstatedopingofcdxhg1xteepitaxiallayerswithelementsofvgroup AT bonchykayu solidstatedopingofcdxhg1xteepitaxiallayerswithelementsofvgroup AT fodchukim solidstatedopingofcdxhg1xteepitaxiallayerswithelementsofvgroup AT barcza solidstatedopingofcdxhg1xteepitaxiallayerswithelementsofvgroup AT swiatekzt solidstatedopingofcdxhg1xteepitaxiallayerswithelementsofvgroup AT zaplitnyyra solidstatedopingofcdxhg1xteepitaxiallayerswithelementsofvgroup |
| first_indexed |
2025-12-07T19:19:56Z |
| last_indexed |
2025-12-07T19:19:56Z |
| _version_ |
1850878403384705024 |