An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2006
• Hauptverfasser: Houk, Yu., Iniguez, B., Flandre, D., Nazarov, A.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121592
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications / Yu. Houk, B. Iniguez, D. Flandre, A. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 43-54. — Бібліогр.: 15 назв. — англ.

An accumulation mode SOI pMOSFET model for simulation of analog circuits meant for high-temperature applications is presented in the paper. The model is based on explicit expressions for the drain current with an infinite order of continuity what assures smooth transitions between different operatio...