Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry
The multiangular ellipsometric measurements were conducted at two wavelengths 435 and 579 nm on the system that contains cadmium telluride film deposited onto the monocrystalline silicon substrate. The refraction index and the film thickness as well as their distribution over the sample area were de...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2006 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121593 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry / V.A. Odarych, A.Z. Sarsembaeva, F.F. Sizov, M.V. Vuichyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 55-60. — Бібліогр.: 5 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862595903166087168 |
|---|---|
| author | Odarych, V.A. Sarsembaeva, A.Z. Vuichyk, M.V. Sizov, F.F. |
| author_facet | Odarych, V.A. Sarsembaeva, A.Z. Vuichyk, M.V. Sizov, F.F. |
| citation_txt | Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry / V.A. Odarych, A.Z. Sarsembaeva, F.F. Sizov, M.V. Vuichyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 55-60. — Бібліогр.: 5 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The multiangular ellipsometric measurements were conducted at two wavelengths 435 and 579 nm on the system that contains cadmium telluride film deposited onto the monocrystalline silicon substrate. The refraction index and the film thickness as well as their distribution over the sample area were determined. It has been shown that the refraction index of the film (2.15…2.35) is less than that of the monocrystalline cadmium telluride (~3) that can testify the porous structure of the film or about roughness of the film surface. Obtained dependences of values of the film optical parameters from the angle of incidence testify weak heterogeneity of film properties along its depth. It was detected that there are the false solutions of the ellipsometric equation for each angle of incidence.
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| first_indexed | 2025-11-27T14:15:20Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121593 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-27T14:15:20Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Odarych, V.A. Sarsembaeva, A.Z. Vuichyk, M.V. Sizov, F.F. 2017-06-14T17:31:27Z 2017-06-14T17:31:27Z 2006 Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry / V.A. Odarych, A.Z. Sarsembaeva, F.F. Sizov, M.V. Vuichyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 55-60. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS 78.66.-w https://nasplib.isofts.kiev.ua/handle/123456789/121593 The multiangular ellipsometric measurements were conducted at two wavelengths 435 and 579 nm on the system that contains cadmium telluride film deposited onto the monocrystalline silicon substrate. The refraction index and the film thickness as well as their distribution over the sample area were determined. It has been shown that the refraction index of the film (2.15…2.35) is less than that of the monocrystalline cadmium telluride (~3) that can testify the porous structure of the film or about roughness of the film surface. Obtained dependences of values of the film optical parameters from the angle of incidence testify weak heterogeneity of film properties along its depth. It was detected that there are the false solutions of the ellipsometric equation for each angle of incidence. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry Article published earlier |
| spellingShingle | Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry Odarych, V.A. Sarsembaeva, A.Z. Vuichyk, M.V. Sizov, F.F. |
| title | Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry |
| title_full | Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry |
| title_fullStr | Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry |
| title_full_unstemmed | Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry |
| title_short | Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry |
| title_sort | determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121593 |
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