Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2006
• Автори: Odarych, V.A., Sarsembaeva, A.Z., Vuichyk, M.V., Sizov, F.F.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/121593
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry / V.A. Odarych, A.Z. Sarsembaeva, F.F. Sizov, M.V. Vuichyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 55-60. — Бібліогр.: 5 назв. — англ.

The multiangular ellipsometric measurements were conducted at two wavelengths 435 and 579 nm on the system that contains cadmium telluride film deposited onto the monocrystalline silicon substrate. The refraction index and the film thickness as well as their distribution over the sample area were de...