Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2006
• Main Authors: Odarych, V.A., Sarsembaeva, A.Z., Vuichyk, M.V., Sizov, F.F.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121593
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry / V.A. Odarych, A.Z. Sarsembaeva, F.F. Sizov, M.V. Vuichyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 55-60. — Бібліогр.: 5 назв. — англ.

The multiangular ellipsometric measurements were conducted at two wavelengths 435 and 579 nm on the system that contains cadmium telluride film deposited onto the monocrystalline silicon substrate. The refraction index and the film thickness as well as their distribution over the sample area were de...