Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials
In the work, non-destructive testing the Si and Ge semiconductors by pulse X-ray sources is discussed. Mathematical simulation of the radiation generation in reflection and transmission anode tubes is performed. Details of energy spectrum formation in these pulse tubes are analyzed, and its transfor...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2006 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121595 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials / S.V. Denbnovetsky, N.V. Slobodyan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 68-72. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862727258968424448 |
|---|---|
| author | Denbnovetsky, S.V. Slobodyan, N.V. |
| author_facet | Denbnovetsky, S.V. Slobodyan, N.V. |
| citation_txt | Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials / S.V. Denbnovetsky, N.V. Slobodyan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 68-72. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In the work, non-destructive testing the Si and Ge semiconductors by pulse X-ray sources is discussed. Mathematical simulation of the radiation generation in reflection and transmission anode tubes is performed. Details of energy spectrum formation in these pulse tubes are analyzed, and its transformation when passing through thin samples of semiconductor materials is discussed. The dependence of the amount of radiation absorbed by the samples on the amplitude of acceleration voltage is calculated. It is shown how the pulse operation regime and design features of pulse tubes influence the characteristics of the X-ray radiation.
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| first_indexed | 2025-12-07T19:02:50Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121595 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:02:50Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Denbnovetsky, S.V. Slobodyan, N.V. 2017-06-14T17:32:41Z 2017-06-14T17:32:41Z 2006 Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials / S.V. Denbnovetsky, N.V. Slobodyan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 68-72. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 61.10.Nz https://nasplib.isofts.kiev.ua/handle/123456789/121595 In the work, non-destructive testing the Si and Ge semiconductors by pulse X-ray sources is discussed. Mathematical simulation of the radiation generation in reflection and transmission anode tubes is performed. Details of energy spectrum formation in these pulse tubes are analyzed, and its transformation when passing through thin samples of semiconductor materials is discussed. The dependence of the amount of radiation absorbed by the samples on the amplitude of acceleration voltage is calculated. It is shown how the pulse operation regime and design features of pulse tubes influence the characteristics of the X-ray radiation. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials Article published earlier |
| spellingShingle | Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials Denbnovetsky, S.V. Slobodyan, N.V. |
| title | Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials |
| title_full | Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials |
| title_fullStr | Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials |
| title_full_unstemmed | Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials |
| title_short | Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials |
| title_sort | simulation of radiation characteristics of pulse x-ray devices for non-destructive testing the semiconductor materials |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121595 |
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