Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2006
• Main Authors: Denbnovetsky, S.V., Slobodyan, N.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121595
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials / S.V. Denbnovetsky, N.V. Slobodyan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 68-72. — Бібліогр.: 10 назв. — англ.

In the work, non-destructive testing the Si and Ge semiconductors by pulse X-ray sources is discussed. Mathematical simulation of the radiation generation in reflection and transmission anode tubes is performed. Details of energy spectrum formation in these pulse tubes are analyzed, and its transfor...