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Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials

In the work, non-destructive testing the Si and Ge semiconductors by pulse X-ray sources is discussed. Mathematical simulation of the radiation generation in reflection and transmission anode tubes is performed. Details of energy spectrum formation in these pulse tubes are analyzed, and its transfor...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2006
Hauptverfasser:	Denbnovetsky, S.V., Slobodyan, N.V.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/121595
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials / S.V. Denbnovetsky, N.V. Slobodyan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 68-72. — Бібліогр.: 10 назв. — англ.

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