Dynamic electrophysical characterization of porous silicon humidity sensing

The results of the investigation of changes of parameters of bipolar and unipolar dynamic current-voltage characteristics and transient currents as well as dynamic bipolar charge-voltage loops connected with the pulse change of humidity for the samples of por-Si are presented. The hysteresis view of...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2006
Hauptverfasser: Bravina, S., Morozovsky, N., Boukroub, R.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121597
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Dynamic electrophysical characterization of porous silicon humidity sensing / S. Bravina, N. Morozovsky, R. Boukroub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 79-83. — Бібліогр.: 10 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121597
record_format dspace
spelling Bravina, S.
Morozovsky, N.
Boukroub, R.
2017-06-14T17:35:09Z
2017-06-14T17:35:09Z
2006
Dynamic electrophysical characterization of porous silicon humidity sensing / S. Bravina, N. Morozovsky, R. Boukroub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 79-83. — Бібліогр.: 10 назв. — англ.
1560-8034
PACS 07.07.DF
https://nasplib.isofts.kiev.ua/handle/123456789/121597
The results of the investigation of changes of parameters of bipolar and unipolar dynamic current-voltage characteristics and transient currents as well as dynamic bipolar charge-voltage loops connected with the pulse change of humidity for the samples of por-Si are presented. The hysteresis view of charge-voltage and current-voltage curves is characteristic for poling processes in the space charge region similar to that observed in the case of typical ionic conductors. Observed phases of transformation of investigated electrophysical characteristics reflect the time sсale of processes in the consequence “adsorption – dissociation and transfer – desorption”. The efficiency of using the methods of dynamic electrophysical characterization for studying characteristics of porous materials under fast humidity changes was demonstrated.
Authors gratefully acknowledge Conseil Regional of Nord-Pas-de-Calais for financial support (grant no 04140209).
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Dynamic electrophysical characterization of porous silicon humidity sensing
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Dynamic electrophysical characterization of porous silicon humidity sensing
spellingShingle Dynamic electrophysical characterization of porous silicon humidity sensing
Bravina, S.
Morozovsky, N.
Boukroub, R.
title_short Dynamic electrophysical characterization of porous silicon humidity sensing
title_full Dynamic electrophysical characterization of porous silicon humidity sensing
title_fullStr Dynamic electrophysical characterization of porous silicon humidity sensing
title_full_unstemmed Dynamic electrophysical characterization of porous silicon humidity sensing
title_sort dynamic electrophysical characterization of porous silicon humidity sensing
author Bravina, S.
Morozovsky, N.
Boukroub, R.
author_facet Bravina, S.
Morozovsky, N.
Boukroub, R.
publishDate 2006
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The results of the investigation of changes of parameters of bipolar and unipolar dynamic current-voltage characteristics and transient currents as well as dynamic bipolar charge-voltage loops connected with the pulse change of humidity for the samples of por-Si are presented. The hysteresis view of charge-voltage and current-voltage curves is characteristic for poling processes in the space charge region similar to that observed in the case of typical ionic conductors. Observed phases of transformation of investigated electrophysical characteristics reflect the time sсale of processes in the consequence “adsorption – dissociation and transfer – desorption”. The efficiency of using the methods of dynamic electrophysical characterization for studying characteristics of porous materials under fast humidity changes was demonstrated.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121597
citation_txt Dynamic electrophysical characterization of porous silicon humidity sensing / S. Bravina, N. Morozovsky, R. Boukroub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 79-83. — Бібліогр.: 10 назв. — англ.
work_keys_str_mv AT bravinas dynamicelectrophysicalcharacterizationofporoussiliconhumiditysensing
AT morozovskyn dynamicelectrophysicalcharacterizationofporoussiliconhumiditysensing
AT boukroubr dynamicelectrophysicalcharacterizationofporoussiliconhumiditysensing
first_indexed 2025-12-07T19:31:46Z
last_indexed 2025-12-07T19:31:46Z
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