Dynamic electrophysical characterization of porous silicon humidity sensing
The results of the investigation of changes of parameters of bipolar and unipolar dynamic current-voltage characteristics and transient currents as well as dynamic bipolar charge-voltage loops connected with the pulse change of humidity for the samples of por-Si are presented. The hysteresis view of...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2006 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121597 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Dynamic electrophysical characterization of porous silicon humidity sensing / S. Bravina, N. Morozovsky, R. Boukroub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 79-83. — Бібліогр.: 10 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862732324458725376 |
|---|---|
| author | Bravina, S. Morozovsky, N. Boukroub, R. |
| author_facet | Bravina, S. Morozovsky, N. Boukroub, R. |
| citation_txt | Dynamic electrophysical characterization of porous silicon humidity sensing / S. Bravina, N. Morozovsky, R. Boukroub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 79-83. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The results of the investigation of changes of parameters of bipolar and unipolar dynamic current-voltage characteristics and transient currents as well as dynamic bipolar charge-voltage loops connected with the pulse change of humidity for the samples of por-Si are presented. The hysteresis view of charge-voltage and current-voltage curves is characteristic for poling processes in the space charge region similar to that observed in the case of typical ionic conductors. Observed phases of transformation of investigated electrophysical characteristics reflect the time sсale of processes in the consequence “adsorption – dissociation and transfer – desorption”. The efficiency of using the methods of dynamic electrophysical characterization for studying characteristics of porous materials under fast humidity changes was demonstrated.
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| first_indexed | 2025-12-07T19:31:46Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121597 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T19:31:46Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Bravina, S. Morozovsky, N. Boukroub, R. 2017-06-14T17:35:09Z 2017-06-14T17:35:09Z 2006 Dynamic electrophysical characterization of porous silicon humidity sensing / S. Bravina, N. Morozovsky, R. Boukroub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 79-83. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 07.07.DF https://nasplib.isofts.kiev.ua/handle/123456789/121597 The results of the investigation of changes of parameters of bipolar and unipolar dynamic current-voltage characteristics and transient currents as well as dynamic bipolar charge-voltage loops connected with the pulse change of humidity for the samples of por-Si are presented. The hysteresis view of charge-voltage and current-voltage curves is characteristic for poling processes in the space charge region similar to that observed in the case of typical ionic conductors. Observed phases of transformation of investigated electrophysical characteristics reflect the time sсale of processes in the consequence “adsorption – dissociation and transfer – desorption”. The efficiency of using the methods of dynamic electrophysical characterization for studying characteristics of porous materials under fast humidity changes was demonstrated. Authors gratefully acknowledge Conseil Regional of
 Nord-Pas-de-Calais for financial support (grant
 no
 04140209). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Dynamic electrophysical characterization of porous silicon humidity sensing Article published earlier |
| spellingShingle | Dynamic electrophysical characterization of porous silicon humidity sensing Bravina, S. Morozovsky, N. Boukroub, R. |
| title | Dynamic electrophysical characterization of porous silicon humidity sensing |
| title_full | Dynamic electrophysical characterization of porous silicon humidity sensing |
| title_fullStr | Dynamic electrophysical characterization of porous silicon humidity sensing |
| title_full_unstemmed | Dynamic electrophysical characterization of porous silicon humidity sensing |
| title_short | Dynamic electrophysical characterization of porous silicon humidity sensing |
| title_sort | dynamic electrophysical characterization of porous silicon humidity sensing |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121597 |
| work_keys_str_mv | AT bravinas dynamicelectrophysicalcharacterizationofporoussiliconhumiditysensing AT morozovskyn dynamicelectrophysicalcharacterizationofporoussiliconhumiditysensing AT boukroubr dynamicelectrophysicalcharacterizationofporoussiliconhumiditysensing |