Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments
Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2016 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121600 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 279-284. — Бібліогр.: 29 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Milenin, G.V. Red’ko, R.A. 2017-06-14T17:39:48Z 2017-06-14T17:39:48Z 2016 Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 279-284. — Бібліогр.: 29 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.03.279 PACS 72.20.Jv, 75.60.Lr, 78.55.Cr https://nasplib.isofts.kiev.ua/handle/123456789/121600 Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented. The authors thank to V.V. Milenin for his interest and important notes. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments |
| spellingShingle |
Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments Milenin, G.V. Red’ko, R.A. |
| title_short |
Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments |
| title_full |
Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments |
| title_fullStr |
Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments |
| title_full_unstemmed |
Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments |
| title_sort |
physical mechanisms and models of long-term transformations of radiative recombination in n-gaas due to the magnetic field treatments |
| author |
Milenin, G.V. Red’ko, R.A. |
| author_facet |
Milenin, G.V. Red’ko, R.A. |
| publishDate |
2016 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121600 |
| citation_txt |
Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 279-284. — Бібліогр.: 29 назв. — англ. |
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AT mileningv physicalmechanismsandmodelsoflongtermtransformationsofradiativerecombinationinngaasduetothemagneticfieldtreatments AT redkora physicalmechanismsandmodelsoflongtermtransformationsofradiativerecombinationinngaasduetothemagneticfieldtreatments |
| first_indexed |
2025-11-28T10:54:12Z |
| last_indexed |
2025-11-28T10:54:12Z |
| _version_ |
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