Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments

Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.

Збережено в:
Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2016
Автори: Milenin, G.V., Red’ko, R.A.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121600
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 279-284. — Бібліогр.: 29 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862605078616080384
author Milenin, G.V.
Red’ko, R.A.
author_facet Milenin, G.V.
Red’ko, R.A.
citation_txt Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 279-284. — Бібліогр.: 29 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.
first_indexed 2025-11-28T10:54:12Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-121600
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-11-28T10:54:12Z
publishDate 2016
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Milenin, G.V.
Red’ko, R.A.
2017-06-14T17:39:48Z
2017-06-14T17:39:48Z
2016
Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 279-284. — Бібліогр.: 29 назв. — англ.
1560-8034
DOI: 10.15407/spqeo19.03.279
PACS 72.20.Jv, 75.60.Lr, 78.55.Cr
https://nasplib.isofts.kiev.ua/handle/123456789/121600
Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.
The authors thank to V.V. Milenin for his interest
 and important notes.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments
Article
published earlier
spellingShingle Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments
Milenin, G.V.
Red’ko, R.A.
title Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments
title_full Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments
title_fullStr Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments
title_full_unstemmed Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments
title_short Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments
title_sort physical mechanisms and models of long-term transformations of radiative recombination in n-gaas due to the magnetic field treatments
url https://nasplib.isofts.kiev.ua/handle/123456789/121600
work_keys_str_mv AT mileningv physicalmechanismsandmodelsoflongtermtransformationsofradiativerecombinationinngaasduetothemagneticfieldtreatments
AT redkora physicalmechanismsandmodelsoflongtermtransformationsofradiativerecombinationinngaasduetothemagneticfieldtreatments