Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments
Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2016 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121600 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 279-284. — Бібліогр.: 29 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862605078616080384 |
|---|---|
| author | Milenin, G.V. Red’ko, R.A. |
| author_facet | Milenin, G.V. Red’ko, R.A. |
| citation_txt | Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 279-284. — Бібліогр.: 29 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.
|
| first_indexed | 2025-11-28T10:54:12Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121600 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-28T10:54:12Z |
| publishDate | 2016 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Milenin, G.V. Red’ko, R.A. 2017-06-14T17:39:48Z 2017-06-14T17:39:48Z 2016 Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 279-284. — Бібліогр.: 29 назв. — англ. 1560-8034 DOI: 10.15407/spqeo19.03.279 PACS 72.20.Jv, 75.60.Lr, 78.55.Cr https://nasplib.isofts.kiev.ua/handle/123456789/121600 Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented. The authors thank to V.V. Milenin for his interest
 and important notes. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments Article published earlier |
| spellingShingle | Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments Milenin, G.V. Red’ko, R.A. |
| title | Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments |
| title_full | Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments |
| title_fullStr | Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments |
| title_full_unstemmed | Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments |
| title_short | Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments |
| title_sort | physical mechanisms and models of long-term transformations of radiative recombination in n-gaas due to the magnetic field treatments |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121600 |
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