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Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments

Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2016
Hauptverfasser: Milenin, G.V., Red’ko, R.A.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121600
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 279-284. — Бібліогр.: 29 назв. — англ.

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