Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments
Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2016 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2016
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121600 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 279-284. — Бібліогр.: 29 назв. — англ. |