Electrical properties of InSb p-n junctions prepared by diffusion methods

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2016
• Main Authors: Sukach, A.V., Tetyorkin, V.V., Tkachuk, A.I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121603
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Electrical properties of InSb p-n junctions prepared by diffusion methods / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 295-298. — Бібліогр.: 20 назв. — англ.

InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias voltage. The highest values of the resistance-area product at zero bias have b...