Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis

Investigated in this work were the photoluminescence spectra and luminescence excitation spectra of powered ZnS:Cu, obtained using the method of selfpropagating high-temperature synthesis (SHS) with addition of NaCl and MgCl₂ as a fluxing agent into the charge and without them. It was shown that inc...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2016
Hauptverfasser: Bacherikov, Yu.Yu., Okhrimenko, O.B., Zhuk, A.G., Kurichka, R.V., Gilchuk, A.V.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121604
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Zitieren:Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis / Yu.Yu. Bacherikov, O.B. Okhrimenko, A.G. Zhuk, R.V. Kurichka, A.V. Gilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 303-306. — Бібліогр.: 20 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121604
record_format dspace
spelling Bacherikov, Yu.Yu.
Okhrimenko, O.B.
Zhuk, A.G.
Kurichka, R.V.
Gilchuk, A.V.
2017-06-14T18:37:17Z
2017-06-14T18:37:17Z
2016
Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis / Yu.Yu. Bacherikov, O.B. Okhrimenko, A.G. Zhuk, R.V. Kurichka, A.V. Gilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 303-306. — Бібліогр.: 20 назв. — англ.
1560-8034
DOI: 10.15407/spqeo19.03.303
PACS 78.55.Et
https://nasplib.isofts.kiev.ua/handle/123456789/121604
Investigated in this work were the photoluminescence spectra and luminescence excitation spectra of powered ZnS:Cu, obtained using the method of selfpropagating high-temperature synthesis (SHS) with addition of NaCl and MgCl₂ as a fluxing agent into the charge and without them. It was shown that increasing the amount of fraction with the particle sizes ≤5 nm in powdered ZnS:Cu-SHS, where fluxing agents are present in the charge, is caused by the decrease in temperature inside the reactor in the course of the synthesis reaction. Besides, related increasing the intensity of the PL blue band with λmax ~ 450…465 nm in powdered ZnS:Cu-SHS/MgCl₂, which is associated with redistribution of the copper impurity in the bulk of microcrystals, probably, occurring as a result of increasing the partial pressure of Cl during synthesis.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis
spellingShingle Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis
Bacherikov, Yu.Yu.
Okhrimenko, O.B.
Zhuk, A.G.
Kurichka, R.V.
Gilchuk, A.V.
title_short Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis
title_full Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis
title_fullStr Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis
title_full_unstemmed Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis
title_sort influence of the presence of a fluxing agent and its composition on the spectral characteristics of zns(cu) obtained by self-propagating high-temperature synthesis
author Bacherikov, Yu.Yu.
Okhrimenko, O.B.
Zhuk, A.G.
Kurichka, R.V.
Gilchuk, A.V.
author_facet Bacherikov, Yu.Yu.
Okhrimenko, O.B.
Zhuk, A.G.
Kurichka, R.V.
Gilchuk, A.V.
publishDate 2016
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Investigated in this work were the photoluminescence spectra and luminescence excitation spectra of powered ZnS:Cu, obtained using the method of selfpropagating high-temperature synthesis (SHS) with addition of NaCl and MgCl₂ as a fluxing agent into the charge and without them. It was shown that increasing the amount of fraction with the particle sizes ≤5 nm in powdered ZnS:Cu-SHS, where fluxing agents are present in the charge, is caused by the decrease in temperature inside the reactor in the course of the synthesis reaction. Besides, related increasing the intensity of the PL blue band with λmax ~ 450…465 nm in powdered ZnS:Cu-SHS/MgCl₂, which is associated with redistribution of the copper impurity in the bulk of microcrystals, probably, occurring as a result of increasing the partial pressure of Cl during synthesis.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121604
citation_txt Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high-temperature synthesis / Yu.Yu. Bacherikov, O.B. Okhrimenko, A.G. Zhuk, R.V. Kurichka, A.V. Gilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 303-306. — Бібліогр.: 20 назв. — англ.
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