Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique

Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film was obtained using the high target utilization sputtering onto c-cut sapphire substrates. X-ray diffraction studies show the film to be amorphous with some crystalline inclusions. SEM investigations indicate formation of periodical “forest-like” quasi-two-dimensional...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2016
Автори: Studenyak, I.P., Kutsyk, M.M., Studenyak, V.I., Bendak, A.V., Izai, V.Yu., Kúš, P., Mikula, M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121605
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique / I.P. Studenyak, M.M. Kutsyk, V.I. Studenyak, A.V. Bendak, V.Yu. Izai, P. Kúš, M. Mikula // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 307-310. — Бібліогр.: 12 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121605
record_format dspace
spelling Studenyak, I.P.
Kutsyk, M.M.
Studenyak, V.I.
Bendak, A.V.
Izai, V.Yu.
Kúš, P.
Mikula, M.
2017-06-14T18:37:53Z
2017-06-14T18:37:53Z
2016
Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique / I.P. Studenyak, M.M. Kutsyk, V.I. Studenyak, A.V. Bendak, V.Yu. Izai, P. Kúš, M. Mikula // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 307-310. — Бібліогр.: 12 назв. — англ.
1560-8034
DOI: 10.15407/spqeo19.03.307
PACS 78.40.Ha, 77.80.Bh
https://nasplib.isofts.kiev.ua/handle/123456789/121605
Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film was obtained using the high target utilization sputtering onto c-cut sapphire substrates. X-ray diffraction studies show the film to be amorphous with some crystalline inclusions. SEM investigations indicate formation of periodical “forest-like” quasi-two-dimensional pillared structure. Electrical conductivity of Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film was measured in the temperature interval 4.5…300 K, three regions with different activation energy were revealed. Optical constants were obtained using the technique of spectroscopic ellipsometry and used for calculation of optical absorption spectrum. Optical absorption edge has an exponential form, the Urbach energy shows the significant disordering in Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film.
Mykhailo Kutsyk (contract number 51602011) is strongly grateful to the International Visegrad Fund scholarship for funding the project.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique
spellingShingle Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique
Studenyak, I.P.
Kutsyk, M.M.
Studenyak, V.I.
Bendak, A.V.
Izai, V.Yu.
Kúš, P.
Mikula, M.
title_short Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique
title_full Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique
title_fullStr Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique
title_full_unstemmed Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique
title_sort structural, electrical and optical investigations of cu₆ps₅br-based thin film deposited by hitus technique
author Studenyak, I.P.
Kutsyk, M.M.
Studenyak, V.I.
Bendak, A.V.
Izai, V.Yu.
Kúš, P.
Mikula, M.
author_facet Studenyak, I.P.
Kutsyk, M.M.
Studenyak, V.I.
Bendak, A.V.
Izai, V.Yu.
Kúš, P.
Mikula, M.
publishDate 2016
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film was obtained using the high target utilization sputtering onto c-cut sapphire substrates. X-ray diffraction studies show the film to be amorphous with some crystalline inclusions. SEM investigations indicate formation of periodical “forest-like” quasi-two-dimensional pillared structure. Electrical conductivity of Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film was measured in the temperature interval 4.5…300 K, three regions with different activation energy were revealed. Optical constants were obtained using the technique of spectroscopic ellipsometry and used for calculation of optical absorption spectrum. Optical absorption edge has an exponential form, the Urbach energy shows the significant disordering in Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121605
citation_txt Structural, electrical and optical investigations of Cu₆PS₅Br-based thin film deposited by HiTUS technique / I.P. Studenyak, M.M. Kutsyk, V.I. Studenyak, A.V. Bendak, V.Yu. Izai, P. Kúš, M. Mikula // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 307-310. — Бібліогр.: 12 назв. — англ.
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