Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe
The defects in CdTe and CdSe nanocrystals were studied by comparing the photoluminescence spectra and cyclic voltammetry dependences, which enabled us to identify two main electron levels in CdTe and four in CdSe NCs. In CdTe nanocrystals these levels are: a hole trap at the energy EV + 0.5 eV and a...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2006 |
| Автор: | |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121609 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe / V.N. Babentsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 94-98. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862641403053473792 |
|---|---|
| author | Babentsov, V.N. |
| author_facet | Babentsov, V.N. |
| citation_txt | Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe / V.N. Babentsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 94-98. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The defects in CdTe and CdSe nanocrystals were studied by comparing the photoluminescence spectra and cyclic voltammetry dependences, which enabled us to identify two main electron levels in CdTe and four in CdSe NCs. In CdTe nanocrystals these levels are: a hole trap at the energy EV + 0.5 eV and an electron trap at Ec – 0.5 eV. In CdSe nanocrystals, detected were two hole traps at Ev + 0.52 eV and Ev + 0.8 eV, and two electron traps at Ec – 0.25 eV and Ec – 0.65 eV. The 2+/1+ level of VCd or Tei is suggested to be an acceptor, and the 2–/1– level of an antisite defect is suggested to be a donor level.
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| first_indexed | 2025-12-01T04:37:43Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121609 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T04:37:43Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Babentsov, V.N. 2017-06-15T02:55:59Z 2017-06-15T02:55:59Z 2006 Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe / V.N. Babentsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 94-98. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 71.55.-I, 73.22.-f https://nasplib.isofts.kiev.ua/handle/123456789/121609 The defects in CdTe and CdSe nanocrystals were studied by comparing the photoluminescence spectra and cyclic voltammetry dependences, which enabled us to identify two main electron levels in CdTe and four in CdSe NCs. In CdTe nanocrystals these levels are: a hole trap at the energy EV + 0.5 eV and an electron trap at Ec – 0.5 eV. In CdSe nanocrystals, detected were two hole traps at Ev + 0.52 eV and Ev + 0.8 eV, and two electron traps at Ec – 0.25 eV and Ec – 0.65 eV. The 2+/1+ level of VCd or Tei is suggested to be an acceptor, and the 2–/1– level of an antisite defect is suggested to be a donor level. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe Article published earlier |
| spellingShingle | Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe Babentsov, V.N. |
| title | Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe |
| title_full | Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe |
| title_fullStr | Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe |
| title_full_unstemmed | Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe |
| title_short | Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe |
| title_sort | defects with deep donor and acceptor levels in nanocrystals of cdte and cdse |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121609 |
| work_keys_str_mv | AT babentsovvn defectswithdeepdonorandacceptorlevelsinnanocrystalsofcdteandcdse |