Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2006
• 1. Verfasser: Babentsov, V.N.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121609
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe / V.N. Babentsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 94-98. — Бібліогр.: 14 назв. — англ.

The defects in CdTe and CdSe nanocrystals were studied by comparing the photoluminescence spectra and cyclic voltammetry dependences, which enabled us to identify two main electron levels in CdTe and four in CdSe NCs. In CdTe nanocrystals these levels are: a hole trap at the energy EV + 0.5 eV and a...