Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2006
• Hauptverfasser: Abbasov, Sh.M., Agaverdiyeva, Y.T., Kerimova, T.I.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121613
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K / Sh.M. Abbasov, Y.T. Agaverdiyeva, T.I. Kerimova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 22-24. — Бібліогр.: 10 назв. — англ.

Ge₁₋xSix solid solutions are one of promissing materials for semiconductor technique. However, their electrical and optical properties, especially with silicon content more than 5 at. % have been little studied. In particular, in the number of works [1-3] there have been presented the experimental results of study in the region 0.52 eV in germanium irradiated by fast electrons, gamma-rays and protons at the temperature of liquid nitrogen. In the literature, however, there are no data on studying the absorption band in the range 0.52 eV in Ge₁₋xSix solid solution irradiated by fast electrons.