Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2006
• Main Authors: Abbasov, Sh.M., Agaverdiyeva, Y.T., Kerimova, T.I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121613
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K / Sh.M. Abbasov, Y.T. Agaverdiyeva, T.I. Kerimova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 22-24. — Бібліогр.: 10 назв. — англ.

Ge₁₋xSix solid solutions are one of promissing materials for semiconductor technique. However, their electrical and optical properties, especially with silicon content more than 5 at. % have been little studied. In particular, in the number of works [1-3] there have been presented the experimental r...