Photoelectric properties of single crystals Ag₃In₅Se₉

Low-resistance and high-resistance single crystals of Ag₃In₅Se₉ compound have been grown using the methods of zone recrystallization and slow cooling at a constant gradient of temperature. We have investigated spectral and lux-ampere characteristics of photoconductivity and determined the mechanism...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2006
Hauptverfasser: Huseynov, A.H., Mamedov, R.M.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121614
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Photoelectric properties of single crystals Ag₃In₅Se₉ / A.H. Huseynov, R.M. Mamedov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 25-28. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Huseynov, A.H.
Mamedov, R.M.
author_facet Huseynov, A.H.
Mamedov, R.M.
citation_txt Photoelectric properties of single crystals Ag₃In₅Se₉ / A.H. Huseynov, R.M. Mamedov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 25-28. — Бібліогр.: 7 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Low-resistance and high-resistance single crystals of Ag₃In₅Se₉ compound have been grown using the methods of zone recrystallization and slow cooling at a constant gradient of temperature. We have investigated spectral and lux-ampere characteristics of photoconductivity and determined the mechanism of recombination inherent to non-equilibrium current carriers. It has been ascertained that the capture of electrons emitted by donor centers is caused by a strong electric field applied to a sample.
first_indexed 2025-11-26T22:51:04Z
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institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-11-26T22:51:04Z
publishDate 2006
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Huseynov, A.H.
Mamedov, R.M.
2017-06-15T03:05:07Z
2017-06-15T03:05:07Z
2006
Photoelectric properties of single crystals Ag₃In₅Se₉ / A.H. Huseynov, R.M. Mamedov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 25-28. — Бібліогр.: 7 назв. — англ.
1560-8034
PACS 72.40.+w
https://nasplib.isofts.kiev.ua/handle/123456789/121614
Low-resistance and high-resistance single crystals of Ag₃In₅Se₉ compound have been grown using the methods of zone recrystallization and slow cooling at a constant gradient of temperature. We have investigated spectral and lux-ampere characteristics of photoconductivity and determined the mechanism of recombination inherent to non-equilibrium current carriers. It has been ascertained that the capture of electrons emitted by donor centers is caused by a strong electric field applied to a sample.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Photoelectric properties of single crystals Ag₃In₅Se₉
Article
published earlier
spellingShingle Photoelectric properties of single crystals Ag₃In₅Se₉
Huseynov, A.H.
Mamedov, R.M.
title Photoelectric properties of single crystals Ag₃In₅Se₉
title_full Photoelectric properties of single crystals Ag₃In₅Se₉
title_fullStr Photoelectric properties of single crystals Ag₃In₅Se₉
title_full_unstemmed Photoelectric properties of single crystals Ag₃In₅Se₉
title_short Photoelectric properties of single crystals Ag₃In₅Se₉
title_sort photoelectric properties of single crystals ag₃in₅se₉
url https://nasplib.isofts.kiev.ua/handle/123456789/121614
work_keys_str_mv AT huseynovah photoelectricpropertiesofsinglecrystalsag3in5se9
AT mamedovrm photoelectricpropertiesofsinglecrystalsag3in5se9