The influence of surface defects on the pinhole formation in silicide thin film
The growth of the CoSi layer was considered within the framework of the grain boundary diffusion model. The time dependences of the temperature due to the exothermic reaction of silicide formation as well as the dependences of the CoSi layer thickness were calculated for various values of the reacti...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2006 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121615 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The influence of surface defects on the pinhole formation in silicide thin film / I.V. Belousov, A.N. Grib, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 29-34. — Бібліогр.: 19 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862564437977726976 |
|---|---|
| author | Belousov, I.V. Grib, A.N. Kuznetsov, G.V. |
| author_facet | Belousov, I.V. Grib, A.N. Kuznetsov, G.V. |
| citation_txt | The influence of surface defects on the pinhole formation in silicide thin film / I.V. Belousov, A.N. Grib, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 29-34. — Бібліогр.: 19 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The growth of the CoSi layer was considered within the framework of the grain boundary diffusion model. The time dependences of the temperature due to the exothermic reaction of silicide formation as well as the dependences of the CoSi layer thickness were calculated for various values of the reaction activation energy. It was shown that the heat release at high reaction velocities can lead to the considerable increase of the temperature up to melting of the silicide and covering Co layers. The model of pinhole formation in cobalt silicide films was proposed on the basis of local melting in the reaction area at crystal defects of the silicon surface.
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| first_indexed | 2025-11-25T23:46:38Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121615 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T23:46:38Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Belousov, I.V. Grib, A.N. Kuznetsov, G.V. 2017-06-15T03:05:46Z 2017-06-15T03:05:46Z 2006 The influence of surface defects on the pinhole formation in silicide thin film / I.V. Belousov, A.N. Grib, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 29-34. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS 68.35Fx, 68.55Ln, 82.65.Dp https://nasplib.isofts.kiev.ua/handle/123456789/121615 The growth of the CoSi layer was considered within the framework of the grain boundary diffusion model. The time dependences of the temperature due to the exothermic reaction of silicide formation as well as the dependences of the CoSi layer thickness were calculated for various values of the reaction activation energy. It was shown that the heat release at high reaction velocities can lead to the considerable increase of the temperature up to melting of the silicide and covering Co layers. The model of pinhole formation in cobalt silicide films was proposed on the basis of local melting in the reaction area at crystal defects of the silicon surface. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The influence of surface defects on the pinhole formation in silicide thin film Article published earlier |
| spellingShingle | The influence of surface defects on the pinhole formation in silicide thin film Belousov, I.V. Grib, A.N. Kuznetsov, G.V. |
| title | The influence of surface defects on the pinhole formation in silicide thin film |
| title_full | The influence of surface defects on the pinhole formation in silicide thin film |
| title_fullStr | The influence of surface defects on the pinhole formation in silicide thin film |
| title_full_unstemmed | The influence of surface defects on the pinhole formation in silicide thin film |
| title_short | The influence of surface defects on the pinhole formation in silicide thin film |
| title_sort | influence of surface defects on the pinhole formation in silicide thin film |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121615 |
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