The influence of surface defects on the pinhole formation in silicide thin film
The growth of the CoSi layer was considered within the framework of the grain boundary diffusion model. The time dependences of the temperature due to the exothermic reaction of silicide formation as well as the dependences of the CoSi layer thickness were calculated for various values of the reacti...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2006 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121615 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The influence of surface defects on the pinhole formation in silicide thin film / I.V. Belousov, A.N. Grib, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 29-34. — Бібліогр.: 19 назв. — англ. |