The influence of surface defects on the pinhole formation in silicide thin film

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2006
• Main Authors: Belousov, I.V., Grib, A.N., Kuznetsov, G.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121615
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: The influence of surface defects on the pinhole formation in silicide thin film / I.V. Belousov, A.N. Grib, G.V. Kuznetsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 29-34. — Бібліогр.: 19 назв. — англ.

The growth of the CoSi layer was considered within the framework of the grain boundary diffusion model. The time dependences of the temperature due to the exothermic reaction of silicide formation as well as the dependences of the CoSi layer thickness were calculated for various values of the reacti...