Active inductances controlled in GaAs MESFET technology
Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the advantages of these new structures such as the adjustable character of the val...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2006 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121617 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Active inductances controlled in GaAs MESFET technology / M.S. Benbouza, C. Kenzai-Azizi, N. Merabtine, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 44-48. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121617 |
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Benbouza, M.S. Kenzai-Azizi, C. Merabtine, N. Saidi, Y. Amourache, S. 2017-06-15T03:07:15Z 2017-06-15T03:07:15Z 2006 Active inductances controlled in GaAs MESFET technology / M.S. Benbouza, C. Kenzai-Azizi, N. Merabtine, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 44-48. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 84.37.+q, 85.30. Tv https://nasplib.isofts.kiev.ua/handle/123456789/121617 Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the advantages of these new structures such as the adjustable character of the value of the active inductance like their limitation, and we compare them to those of the literature. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Active inductances controlled in GaAs MESFET technology Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Active inductances controlled in GaAs MESFET technology |
| spellingShingle |
Active inductances controlled in GaAs MESFET technology Benbouza, M.S. Kenzai-Azizi, C. Merabtine, N. Saidi, Y. Amourache, S. |
| title_short |
Active inductances controlled in GaAs MESFET technology |
| title_full |
Active inductances controlled in GaAs MESFET technology |
| title_fullStr |
Active inductances controlled in GaAs MESFET technology |
| title_full_unstemmed |
Active inductances controlled in GaAs MESFET technology |
| title_sort |
active inductances controlled in gaas mesfet technology |
| author |
Benbouza, M.S. Kenzai-Azizi, C. Merabtine, N. Saidi, Y. Amourache, S. |
| author_facet |
Benbouza, M.S. Kenzai-Azizi, C. Merabtine, N. Saidi, Y. Amourache, S. |
| publishDate |
2006 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the advantages of these new structures such as the adjustable character of the value of the active inductance like their limitation, and we compare them to those of the literature.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121617 |
| citation_txt |
Active inductances controlled in GaAs MESFET technology / M.S. Benbouza, C. Kenzai-Azizi, N. Merabtine, Y. Saidi, S. Amourache // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 44-48. — Бібліогр.: 9 назв. — англ. |
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2025-12-07T15:45:05Z |
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