Disappearance of aligning properties of deposited SiOx films as caused by external factors
Thermal and degradation stability of SiOx aligning films deposited by cathode reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that a heat treatment and other external factors initiate transformations on the surface of aligning film and provided new conditions at th...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2006 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121620 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Disappearance of aligning properties of deposited SiOx films as caused by external factors / Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 60-65. — Бібліогр.: 13 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862650318822572032 |
|---|---|
| author | Kolomzarov, Yu. Oleksenko, P. Sorokin, V. Tytarenko, P. Zelinskyy, R. |
| author_facet | Kolomzarov, Yu. Oleksenko, P. Sorokin, V. Tytarenko, P. Zelinskyy, R. |
| citation_txt | Disappearance of aligning properties of deposited SiOx films as caused by external factors / Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 60-65. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Thermal and degradation stability of SiOx aligning films deposited by cathode reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that a heat treatment and other external factors initiate transformations on the surface of aligning film and provided new conditions at the interface. This leads to a change of slight axis orientation direction of LC molecules and appearance of various defects in the LC aligned structures. The technological ways to increase the aligning layer durability under influence of external factors were proposed.
|
| first_indexed | 2025-12-01T16:39:37Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121620 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T16:39:37Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kolomzarov, Yu. Oleksenko, P. Sorokin, V. Tytarenko, P. Zelinskyy, R. 2017-06-15T03:09:42Z 2017-06-15T03:09:42Z 2006 Disappearance of aligning properties of deposited SiOx films as caused by external factors / Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 60-65. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 61.30.Gd, 81.65.Cf, 61.25.Em https://nasplib.isofts.kiev.ua/handle/123456789/121620 Thermal and degradation stability of SiOx aligning films deposited by cathode reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that a heat treatment and other external factors initiate transformations on the surface of aligning film and provided new conditions at the interface. This leads to a change of slight axis orientation direction of LC molecules and appearance of various defects in the LC aligned structures. The technological ways to increase the aligning layer durability under influence of external factors were proposed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Disappearance of aligning properties of deposited SiOx films as caused by external factors Article published earlier |
| spellingShingle | Disappearance of aligning properties of deposited SiOx films as caused by external factors Kolomzarov, Yu. Oleksenko, P. Sorokin, V. Tytarenko, P. Zelinskyy, R. |
| title | Disappearance of aligning properties of deposited SiOx films as caused by external factors |
| title_full | Disappearance of aligning properties of deposited SiOx films as caused by external factors |
| title_fullStr | Disappearance of aligning properties of deposited SiOx films as caused by external factors |
| title_full_unstemmed | Disappearance of aligning properties of deposited SiOx films as caused by external factors |
| title_short | Disappearance of aligning properties of deposited SiOx films as caused by external factors |
| title_sort | disappearance of aligning properties of deposited siox films as caused by external factors |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121620 |
| work_keys_str_mv | AT kolomzarovyu disappearanceofaligningpropertiesofdepositedsioxfilmsascausedbyexternalfactors AT oleksenkop disappearanceofaligningpropertiesofdepositedsioxfilmsascausedbyexternalfactors AT sorokinv disappearanceofaligningpropertiesofdepositedsioxfilmsascausedbyexternalfactors AT tytarenkop disappearanceofaligningpropertiesofdepositedsioxfilmsascausedbyexternalfactors AT zelinskyyr disappearanceofaligningpropertiesofdepositedsioxfilmsascausedbyexternalfactors |