Disappearance of aligning properties of deposited SiOx films as caused by external factors
Thermal and degradation stability of SiOx aligning films deposited by cathode reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that a heat treatment and other external factors initiate transformations on the surface of aligning film and provided new conditions at th...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2006 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121620 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Disappearance of aligning properties of deposited SiOx films as caused by external factors / Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 60-65. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121620 |
|---|---|
| record_format |
dspace |
| spelling |
Kolomzarov, Yu. Oleksenko, P. Sorokin, V. Tytarenko, P. Zelinskyy, R. 2017-06-15T03:09:42Z 2017-06-15T03:09:42Z 2006 Disappearance of aligning properties of deposited SiOx films as caused by external factors / Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 60-65. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 61.30.Gd, 81.65.Cf, 61.25.Em https://nasplib.isofts.kiev.ua/handle/123456789/121620 Thermal and degradation stability of SiOx aligning films deposited by cathode reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that a heat treatment and other external factors initiate transformations on the surface of aligning film and provided new conditions at the interface. This leads to a change of slight axis orientation direction of LC molecules and appearance of various defects in the LC aligned structures. The technological ways to increase the aligning layer durability under influence of external factors were proposed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Disappearance of aligning properties of deposited SiOx films as caused by external factors Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Disappearance of aligning properties of deposited SiOx films as caused by external factors |
| spellingShingle |
Disappearance of aligning properties of deposited SiOx films as caused by external factors Kolomzarov, Yu. Oleksenko, P. Sorokin, V. Tytarenko, P. Zelinskyy, R. |
| title_short |
Disappearance of aligning properties of deposited SiOx films as caused by external factors |
| title_full |
Disappearance of aligning properties of deposited SiOx films as caused by external factors |
| title_fullStr |
Disappearance of aligning properties of deposited SiOx films as caused by external factors |
| title_full_unstemmed |
Disappearance of aligning properties of deposited SiOx films as caused by external factors |
| title_sort |
disappearance of aligning properties of deposited siox films as caused by external factors |
| author |
Kolomzarov, Yu. Oleksenko, P. Sorokin, V. Tytarenko, P. Zelinskyy, R. |
| author_facet |
Kolomzarov, Yu. Oleksenko, P. Sorokin, V. Tytarenko, P. Zelinskyy, R. |
| publishDate |
2006 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Thermal and degradation stability of SiOx aligning films deposited by cathode reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that a heat treatment and other external factors initiate transformations on the surface of aligning film and provided new conditions at the interface. This leads to a change of slight axis orientation direction of LC molecules and appearance of various defects in the LC aligned structures. The technological ways to increase the aligning layer durability under influence of external factors were proposed.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121620 |
| citation_txt |
Disappearance of aligning properties of deposited SiOx films as caused by external factors / Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 60-65. — Бібліогр.: 13 назв. — англ. |
| work_keys_str_mv |
AT kolomzarovyu disappearanceofaligningpropertiesofdepositedsioxfilmsascausedbyexternalfactors AT oleksenkop disappearanceofaligningpropertiesofdepositedsioxfilmsascausedbyexternalfactors AT sorokinv disappearanceofaligningpropertiesofdepositedsioxfilmsascausedbyexternalfactors AT tytarenkop disappearanceofaligningpropertiesofdepositedsioxfilmsascausedbyexternalfactors AT zelinskyyr disappearanceofaligningpropertiesofdepositedsioxfilmsascausedbyexternalfactors |
| first_indexed |
2025-12-01T16:39:37Z |
| last_indexed |
2025-12-01T16:39:37Z |
| _version_ |
1850860744157954048 |