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Disappearance of aligning properties of deposited SiOx films as caused by external factors

Thermal and degradation stability of SiOx aligning films deposited by cathode reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that a heat treatment and other external factors initiate transformations on the surface of aligning film and provided new conditions at th...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2006
Hauptverfasser: Kolomzarov, Yu., Oleksenko, P., Sorokin, V., Tytarenko, P., Zelinskyy, R.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121620
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Disappearance of aligning properties of deposited SiOx films as caused by external factors / Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 60-65. — Бібліогр.: 13 назв. — англ.

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