Disappearance of aligning properties of deposited SiOx films as caused by external factors

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2006
• Main Authors: Kolomzarov, Yu., Oleksenko, P., Sorokin, V., Tytarenko, P., Zelinskyy, R.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121620
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Disappearance of aligning properties of deposited SiOx films as caused by external factors / Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 60-65. — Бібліогр.: 13 назв. — англ.

Thermal and degradation stability of SiOx aligning films deposited by cathode reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that a heat treatment and other external factors initiate transformations on the surface of aligning film and provided new conditions at th...