Ultra-high field transport in GaN-based heterostructures
This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns was used. The experimental results indicate that overheating of the 2DEG does n...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2006 |
| Автори: | , , , , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121621 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Ultra-high field transport in GaN-based heterostructures / S.A. Vitusevich, S.V. Danylyuk, B.A. Danilchenko, N. Klein, S.E. Zelenskyi, E. Drok, A.Yu. Avksentyev, V.N. Sokolov, V.A. Kochelap, A.E. Belyaev, M.V. Petrychuk, H. Luth // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 66-69. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862710474726965248 |
|---|---|
| author | Vitusevich, S.A. Danylyuk, S.V. Danilchenko, B.A. Klein, N. Zelenskyi, S.E. Drok, E. Avksentyev, A.Yu. Sokolov, V.N. Kochelap, V.A. Belyaev, A.E. Petrychuk, M.V. Luth, H. |
| author_facet | Vitusevich, S.A. Danylyuk, S.V. Danilchenko, B.A. Klein, N. Zelenskyi, S.E. Drok, E. Avksentyev, A.Yu. Sokolov, V.N. Kochelap, V.A. Belyaev, A.E. Petrychuk, M.V. Luth, H. |
| citation_txt | Ultra-high field transport in GaN-based heterostructures / S.A. Vitusevich, S.V. Danylyuk, B.A. Danilchenko, N. Klein, S.E. Zelenskyi, E. Drok, A.Yu. Avksentyev, V.N. Sokolov, V.A. Kochelap, A.E. Belyaev, M.V. Petrychuk, H. Luth // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 66-69. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns was used. The experimental results indicate that overheating of the 2DEG does not exceed 1000 K in this electric field range and drift velocity as high as ~10⁷ cm/s was obtained. Additionally, the low frequency 1/f noise spectra measured for a different bias voltage are analyzed with respect to field-induced contribution of hopping conductivity in AlGaN barrier region.
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| first_indexed | 2025-12-07T17:24:59Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121621 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:24:59Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vitusevich, S.A. Danylyuk, S.V. Danilchenko, B.A. Klein, N. Zelenskyi, S.E. Drok, E. Avksentyev, A.Yu. Sokolov, V.N. Kochelap, V.A. Belyaev, A.E. Petrychuk, M.V. Luth, H. 2017-06-15T03:10:37Z 2017-06-15T03:10:37Z 2006 Ultra-high field transport in GaN-based heterostructures / S.A. Vitusevich, S.V. Danylyuk, B.A. Danilchenko, N. Klein, S.E. Zelenskyi, E. Drok, A.Yu. Avksentyev, V.N. Sokolov, V.A. Kochelap, A.E. Belyaev, M.V. Petrychuk, H. Luth // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 66-69. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 72.20.Ht, 72.80.Ey, 73.40.-c https://nasplib.isofts.kiev.ua/handle/123456789/121621 This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns was used. The experimental results indicate that overheating of the 2DEG does not exceed 1000 K in this electric field range and drift velocity as high as ~10⁷ cm/s was obtained. Additionally, the low frequency 1/f noise spectra measured for a different bias voltage are analyzed with respect to field-induced contribution of hopping conductivity in AlGaN barrier region. The authors would like to thank V. Tilak, J. Smart, A. Vertiatchikh and L.F. Eastman (Cornell University) for their collaboration in this study. This work is supported by the Office of Naval Research under Grant No. N00014-01-1-0828 (Project Monitor Dr. Colin
 Wood) and by Deutsche Forschungsgemeinschaft (project No. KL 1342/3). The work at Institute of Semiconductor Physics in Kyiv was supported by CRDF Project No. UE2-2439-KV-02 and Institute of Physics by Ukrainian FFR Project F7/379. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Ultra-high field transport in GaN-based heterostructures Article published earlier |
| spellingShingle | Ultra-high field transport in GaN-based heterostructures Vitusevich, S.A. Danylyuk, S.V. Danilchenko, B.A. Klein, N. Zelenskyi, S.E. Drok, E. Avksentyev, A.Yu. Sokolov, V.N. Kochelap, V.A. Belyaev, A.E. Petrychuk, M.V. Luth, H. |
| title | Ultra-high field transport in GaN-based heterostructures |
| title_full | Ultra-high field transport in GaN-based heterostructures |
| title_fullStr | Ultra-high field transport in GaN-based heterostructures |
| title_full_unstemmed | Ultra-high field transport in GaN-based heterostructures |
| title_short | Ultra-high field transport in GaN-based heterostructures |
| title_sort | ultra-high field transport in gan-based heterostructures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121621 |
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