Ultra-high field transport in GaN-based heterostructures

This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns was used. The experimental results indicate that overheating of the 2DEG does n...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2006
Автори: Vitusevich, S.A., Danylyuk, S.V., Danilchenko, B.A., Klein, N., Zelenskyi, S.E., Drok, E., Avksentyev, A.Yu., Sokolov, V.N., Kochelap, V.A., Belyaev, A.E., Petrychuk, M.V., Luth, H.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121621
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Ultra-high field transport in GaN-based heterostructures / S.A. Vitusevich, S.V. Danylyuk, B.A. Danilchenko, N. Klein, S.E. Zelenskyi, E. Drok, A.Yu. Avksentyev, V.N. Sokolov, V.A. Kochelap, A.E. Belyaev, M.V. Petrychuk, H. Luth // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 66-69. — Бібліогр.: 8 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121621
record_format dspace
spelling Vitusevich, S.A.
Danylyuk, S.V.
Danilchenko, B.A.
Klein, N.
Zelenskyi, S.E.
Drok, E.
Avksentyev, A.Yu.
Sokolov, V.N.
Kochelap, V.A.
Belyaev, A.E.
Petrychuk, M.V.
Luth, H.
2017-06-15T03:10:37Z
2017-06-15T03:10:37Z
2006
Ultra-high field transport in GaN-based heterostructures / S.A. Vitusevich, S.V. Danylyuk, B.A. Danilchenko, N. Klein, S.E. Zelenskyi, E. Drok, A.Yu. Avksentyev, V.N. Sokolov, V.A. Kochelap, A.E. Belyaev, M.V. Petrychuk, H. Luth // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 66-69. — Бібліогр.: 8 назв. — англ.
1560-8034
PACS 72.20.Ht, 72.80.Ey, 73.40.-c
https://nasplib.isofts.kiev.ua/handle/123456789/121621
This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns was used. The experimental results indicate that overheating of the 2DEG does not exceed 1000 K in this electric field range and drift velocity as high as ~10⁷ cm/s was obtained. Additionally, the low frequency 1/f noise spectra measured for a different bias voltage are analyzed with respect to field-induced contribution of hopping conductivity in AlGaN barrier region.
The authors would like to thank V. Tilak, J. Smart, A. Vertiatchikh and L.F. Eastman (Cornell University) for their collaboration in this study. This work is supported by the Office of Naval Research under Grant No. N00014-01-1-0828 (Project Monitor Dr. Colin Wood) and by Deutsche Forschungsgemeinschaft (project No. KL 1342/3). The work at Institute of Semiconductor Physics in Kyiv was supported by CRDF Project No. UE2-2439-KV-02 and Institute of Physics by Ukrainian FFR Project F7/379.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Ultra-high field transport in GaN-based heterostructures
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Ultra-high field transport in GaN-based heterostructures
spellingShingle Ultra-high field transport in GaN-based heterostructures
Vitusevich, S.A.
Danylyuk, S.V.
Danilchenko, B.A.
Klein, N.
Zelenskyi, S.E.
Drok, E.
Avksentyev, A.Yu.
Sokolov, V.N.
Kochelap, V.A.
Belyaev, A.E.
Petrychuk, M.V.
Luth, H.
title_short Ultra-high field transport in GaN-based heterostructures
title_full Ultra-high field transport in GaN-based heterostructures
title_fullStr Ultra-high field transport in GaN-based heterostructures
title_full_unstemmed Ultra-high field transport in GaN-based heterostructures
title_sort ultra-high field transport in gan-based heterostructures
author Vitusevich, S.A.
Danylyuk, S.V.
Danilchenko, B.A.
Klein, N.
Zelenskyi, S.E.
Drok, E.
Avksentyev, A.Yu.
Sokolov, V.N.
Kochelap, V.A.
Belyaev, A.E.
Petrychuk, M.V.
Luth, H.
author_facet Vitusevich, S.A.
Danylyuk, S.V.
Danilchenko, B.A.
Klein, N.
Zelenskyi, S.E.
Drok, E.
Avksentyev, A.Yu.
Sokolov, V.N.
Kochelap, V.A.
Belyaev, A.E.
Petrychuk, M.V.
Luth, H.
publishDate 2006
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns was used. The experimental results indicate that overheating of the 2DEG does not exceed 1000 K in this electric field range and drift velocity as high as ~10⁷ cm/s was obtained. Additionally, the low frequency 1/f noise spectra measured for a different bias voltage are analyzed with respect to field-induced contribution of hopping conductivity in AlGaN barrier region.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121621
citation_txt Ultra-high field transport in GaN-based heterostructures / S.A. Vitusevich, S.V. Danylyuk, B.A. Danilchenko, N. Klein, S.E. Zelenskyi, E. Drok, A.Yu. Avksentyev, V.N. Sokolov, V.A. Kochelap, A.E. Belyaev, M.V. Petrychuk, H. Luth // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 66-69. — Бібліогр.: 8 назв. — англ.
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first_indexed 2025-12-07T17:24:59Z
last_indexed 2025-12-07T17:24:59Z
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