Ultra-high field transport in GaN-based heterostructures

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2006
• Main Authors: Vitusevich, S.A., Danylyuk, S.V., Danilchenko, B.A., Klein, N., Zelenskyi, S.E., Drok, E., Avksentyev, A.Yu., Sokolov, V.N., Kochelap, V.A., Belyaev, A.E., Petrychuk, M.V., Luth, H.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121621
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Ultra-high field transport in GaN-based heterostructures / S.A. Vitusevich, S.V. Danylyuk, B.A. Danilchenko, N. Klein, S.E. Zelenskyi, E. Drok, A.Yu. Avksentyev, V.N. Sokolov, V.A. Kochelap, A.E. Belyaev, M.V. Petrychuk, H. Luth // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 3. — С. 66-69. — Бібліогр.: 8 назв. — англ.

This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns was used. The experimental results indicate that overheating of the 2DEG does n...