Conductivity and photoconductivity peculiarities observed in C₆₀ layers
Thin layers of various thickness prepared from C60 with traces of C70 were studied. They were deposited by thermal evaporation on quartz, glass, p-Si or n-Si substrates. An apparatus fixing current values every 3 ms was used to measure and register the kinetics of layer conductivity and photoconduct...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2006 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121627 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Conductivity and photoconductivity peculiarities observed in C₆₀ layers / St. Kanev, Z. Nenova, N. Koprinarov, K. Ivanova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 17-20. — Бібліогр.: 16 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862693213016424448 |
|---|---|
| author | Kanev, St. Nenova, Z. Koprinarov, N. Ivanova, K. |
| author_facet | Kanev, St. Nenova, Z. Koprinarov, N. Ivanova, K. |
| citation_txt | Conductivity and photoconductivity peculiarities observed in C₆₀ layers / St. Kanev, Z. Nenova, N. Koprinarov, K. Ivanova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 17-20. — Бібліогр.: 16 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Thin layers of various thickness prepared from C60 with traces of C70 were studied. They were deposited by thermal evaporation on quartz, glass, p-Si or n-Si substrates. An apparatus fixing current values every 3 ms was used to measure and register the kinetics of layer conductivity and photoconductivity. Series of peculiarities were observed in the kinetics of the current when an electrical field was applied to illuminated or darkened samples. For example, when voltage is applied to the sample the current immediately rises to a certain value and then falls to a different quasi-stationary value. These peculiarities depend on the particular state of the samples. After analyzing the phenomena, a scheme explaining these peculiarities was proposed which relates mainly to intrinsic polarization. The influence, which these processes might exert on the photoconductivity and data accuracy, was discussed. A substantial influence of ambient humidity was determined. Our study of the observed changes showed that humidity did not substantially affect the generation-recombination processes in the bulk material, but predominantly the carrier transport mechanism.
|
| first_indexed | 2025-12-07T16:20:21Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121627 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:20:21Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kanev, St. Nenova, Z. Koprinarov, N. Ivanova, K. 2017-06-15T03:23:05Z 2017-06-15T03:23:05Z 2006 Conductivity and photoconductivity peculiarities observed in C₆₀ layers / St. Kanev, Z. Nenova, N. Koprinarov, K. Ivanova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 17-20. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 72.20.-i, 72.80.Rj, 73.61.Wp, 73.50.Pz https://nasplib.isofts.kiev.ua/handle/123456789/121627 Thin layers of various thickness prepared from C60 with traces of C70 were studied. They were deposited by thermal evaporation on quartz, glass, p-Si or n-Si substrates. An apparatus fixing current values every 3 ms was used to measure and register the kinetics of layer conductivity and photoconductivity. Series of peculiarities were observed in the kinetics of the current when an electrical field was applied to illuminated or darkened samples. For example, when voltage is applied to the sample the current immediately rises to a certain value and then falls to a different quasi-stationary value. These peculiarities depend on the particular state of the samples. After analyzing the phenomena, a scheme explaining these peculiarities was proposed which relates mainly to intrinsic polarization. The influence, which these processes might exert on the photoconductivity and data accuracy, was discussed. A substantial influence of ambient humidity was determined. Our study of the observed changes showed that humidity did not substantially affect the generation-recombination processes in the bulk material, but predominantly the carrier transport mechanism. The sponsorship of the Bulgarian Ministry of Science and Education under contract F-329 is appreciated. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Conductivity and photoconductivity peculiarities observed in C₆₀ layers Article published earlier |
| spellingShingle | Conductivity and photoconductivity peculiarities observed in C₆₀ layers Kanev, St. Nenova, Z. Koprinarov, N. Ivanova, K. |
| title | Conductivity and photoconductivity peculiarities observed in C₆₀ layers |
| title_full | Conductivity and photoconductivity peculiarities observed in C₆₀ layers |
| title_fullStr | Conductivity and photoconductivity peculiarities observed in C₆₀ layers |
| title_full_unstemmed | Conductivity and photoconductivity peculiarities observed in C₆₀ layers |
| title_short | Conductivity and photoconductivity peculiarities observed in C₆₀ layers |
| title_sort | conductivity and photoconductivity peculiarities observed in c₆₀ layers |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121627 |
| work_keys_str_mv | AT kanevst conductivityandphotoconductivitypeculiaritiesobservedinc60layers AT nenovaz conductivityandphotoconductivitypeculiaritiesobservedinc60layers AT koprinarovn conductivityandphotoconductivitypeculiaritiesobservedinc60layers AT ivanovak conductivityandphotoconductivitypeculiaritiesobservedinc60layers |