Conductivity and photoconductivity peculiarities observed in C₆₀ layers

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2006
• Hauptverfasser: Kanev, St., Nenova, Z., Koprinarov, N., Ivanova, K.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121627
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Conductivity and photoconductivity peculiarities observed in C₆₀ layers / St. Kanev, Z. Nenova, N. Koprinarov, K. Ivanova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 17-20. — Бібліогр.: 16 назв. — англ.

Thin layers of various thickness prepared from C60 with traces of C70 were studied. They were deposited by thermal evaporation on quartz, glass, p-Si or n-Si substrates. An apparatus fixing current values every 3 ms was used to measure and register the kinetics of layer conductivity and photoconduct...