Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions
The influence of constant magnetic field on thermostimutated current, photoconductivity, and magnetic susceptibility of ZnSe-GaAs solid solutions were studied. It was shown that exposition in constant magnetic field results in the concentration decrease of electrically active deep traps. It leads to...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2006 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121629 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions / А.V. Brodovoy, A.M. Veremenko, V.A. Skryshevsky, А.V. Vlasyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 26-30. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862637588265828352 |
|---|---|
| author | Brodovoy, А.V. Veremenko, A.M. Skryshevsky, V.A. Vlasyuk, А.V. |
| author_facet | Brodovoy, А.V. Veremenko, A.M. Skryshevsky, V.A. Vlasyuk, А.V. |
| citation_txt | Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions / А.V. Brodovoy, A.M. Veremenko, V.A. Skryshevsky, А.V. Vlasyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 26-30. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The influence of constant magnetic field on thermostimutated current, photoconductivity, and magnetic susceptibility of ZnSe-GaAs solid solutions were studied. It was shown that exposition in constant magnetic field results in the concentration decrease of electrically active deep traps. It leads to the change of mechanical and magnetic properties of ZnSe-GaAs solid solutions. Proposed was the healing mechanism based on inhomogeneous distribution of the magnetic susceptibility in crystal bulk and, therefore, the appearance of randomly distributed external magnetic fields. Interaction between magnetic moments results in appearance of “driving forces” promoting defect migration and their annihilation.
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| first_indexed | 2025-11-30T23:06:47Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121629 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-30T23:06:47Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Brodovoy, А.V. Veremenko, A.M. Skryshevsky, V.A. Vlasyuk, А.V. 2017-06-15T03:24:18Z 2017-06-15T03:24:18Z 2006 Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions / А.V. Brodovoy, A.M. Veremenko, V.A. Skryshevsky, А.V. Vlasyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 26-30. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 72.40.+w, 73.20.At, 75.80.+q, 81.65.Ps https://nasplib.isofts.kiev.ua/handle/123456789/121629 The influence of constant magnetic field on thermostimutated current, photoconductivity, and magnetic susceptibility of ZnSe-GaAs solid solutions were studied. It was shown that exposition in constant magnetic field results in the concentration decrease of electrically active deep traps. It leads to the change of mechanical and magnetic properties of ZnSe-GaAs solid solutions. Proposed was the healing mechanism based on inhomogeneous distribution of the magnetic susceptibility in crystal bulk and, therefore, the appearance of randomly distributed external magnetic fields. Interaction between magnetic moments results in appearance of “driving forces” promoting defect migration and their annihilation. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions Article published earlier |
| spellingShingle | Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions Brodovoy, А.V. Veremenko, A.M. Skryshevsky, V.A. Vlasyuk, А.V. |
| title | Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions |
| title_full | Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions |
| title_fullStr | Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions |
| title_full_unstemmed | Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions |
| title_short | Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions |
| title_sort | magnetic field impact on electrical properties of znse-gaas solid solutions |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121629 |
| work_keys_str_mv | AT brodovoyav magneticfieldimpactonelectricalpropertiesofznsegaassolidsolutions AT veremenkoam magneticfieldimpactonelectricalpropertiesofznsegaassolidsolutions AT skryshevskyva magneticfieldimpactonelectricalpropertiesofznsegaassolidsolutions AT vlasyukav magneticfieldimpactonelectricalpropertiesofznsegaassolidsolutions |