Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication
Electrophysical parameters of Hg₁₋xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the high-frequency sonication ( fUS = 7.5 MHz, WUS ~ 10⁴ W/m²). It was determined that parameters of MBE-grown Hg₁₋xCdxTe thin films are stable to ultrasoun...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2006 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121630 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication / R.K. Savkina, F.F. Sizov, A.B. Smirnov, V.V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 31-35. — Бібліогр.: 20 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862554614252961792 |
|---|---|
| author | Savkina, R.K. Sizov, F.F. Smirnov, A.B. Tetyorkin, V.V. |
| author_facet | Savkina, R.K. Sizov, F.F. Smirnov, A.B. Tetyorkin, V.V. |
| citation_txt | Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication / R.K. Savkina, F.F. Sizov, A.B. Smirnov, V.V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 31-35. — Бібліогр.: 20 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Electrophysical parameters of Hg₁₋xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the high-frequency sonication ( fUS = 7.5 MHz, WUS ~ 10⁴ W/m²). It was determined that parameters of MBE-grown Hg₁₋xCdxTe thin films are stable to ultrasound effect, while for thin films grown by LPE the sonically stimulated change of the conductivity type was observed. The best agreement between experiment and calculation was obtained in the frame of the assumption about forming of the thin layer with another conductivity type. The possible nature of the observed effect was analyzed.
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| first_indexed | 2025-11-25T21:45:15Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121630 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T21:45:15Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Savkina, R.K. Sizov, F.F. Smirnov, A.B. Tetyorkin, V.V. 2017-06-15T03:27:30Z 2017-06-15T03:27:30Z 2006 Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication / R.K. Savkina, F.F. Sizov, A.B. Smirnov, V.V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 31-35. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS 43.35.+d, 73.61.Ga, 73.50.Jt https://nasplib.isofts.kiev.ua/handle/123456789/121630 Electrophysical parameters of Hg₁₋xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the high-frequency sonication ( fUS = 7.5 MHz, WUS ~ 10⁴ W/m²). It was determined that parameters of MBE-grown Hg₁₋xCdxTe thin films are stable to ultrasound effect, while for thin films grown by LPE the sonically stimulated change of the conductivity type was observed. The best agreement between experiment and calculation was obtained in the frame of the assumption about forming of the thin layer with another conductivity type. The possible nature of the observed effect was analyzed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication Article published earlier |
| spellingShingle | Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication Savkina, R.K. Sizov, F.F. Smirnov, A.B. Tetyorkin, V.V. |
| title | Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication |
| title_full | Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication |
| title_fullStr | Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication |
| title_full_unstemmed | Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication |
| title_short | Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication |
| title_sort | layer structure formation in hg₁₋xcdxte films after high-frequency sonication |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121630 |
| work_keys_str_mv | AT savkinark layerstructureformationinhg1xcdxtefilmsafterhighfrequencysonication AT sizovff layerstructureformationinhg1xcdxtefilmsafterhighfrequencysonication AT smirnovab layerstructureformationinhg1xcdxtefilmsafterhighfrequencysonication AT tetyorkinvv layerstructureformationinhg1xcdxtefilmsafterhighfrequencysonication |