Photoemission spectra of indium selenide
For layered InSe crystals photoluminescence spectra were investigated and the corresponding radiative transitions were analyzed. It was found that along with the band-to-band transitions the radiative ones with participation of impurity levels plays a substantial role in the light emission spectrum...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2006 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121631 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photoemission spectra of indium selenide / V.M. Katerynchuk, M.Z. Kovalyuk, M.V. Tovarnitskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 36-39. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862696772784095232 |
|---|---|
| author | Katerynchuk, V.M. Kovalyuk, M.Z. Tovarnitskii, M.V. |
| author_facet | Katerynchuk, V.M. Kovalyuk, M.Z. Tovarnitskii, M.V. |
| citation_txt | Photoemission spectra of indium selenide / V.M. Katerynchuk, M.Z. Kovalyuk, M.V. Tovarnitskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 36-39. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | For layered InSe crystals photoluminescence spectra were investigated and the corresponding radiative transitions were analyzed. It was found that along with the band-to-band transitions the radiative ones with participation of impurity levels plays a substantial role in the light emission spectrum of the semiconductor. This fact is confirmed by the intensities of the radiative bands for the impurity level – c(v)-band transitions and the donor-acceptor recombination. The temperature dependences of the spectrum in the range of 100 to 300 К have also enabled to ascertain the dynamics of these radiative transitions. At the temperatures 180 to 300 К, the bands associated with the indirect transitions involving indirect free excitons are more intensive. At 100…180 К, the intensity of the bands corresponding to the direct transitions with participation of direct free excitons increases. We have determined the energies of the observed photoluminescence bands, and the band diagram of the corresponding radiative transitions in InSe has been built.
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| first_indexed | 2025-12-07T16:28:01Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121631 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:28:01Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Katerynchuk, V.M. Kovalyuk, M.Z. Tovarnitskii, M.V. 2017-06-15T03:30:54Z 2017-06-15T03:30:54Z 2006 Photoemission spectra of indium selenide / V.M. Katerynchuk, M.Z. Kovalyuk, M.V. Tovarnitskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 36-39. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 78.55.–m, 78.60.–b https://nasplib.isofts.kiev.ua/handle/123456789/121631 For layered InSe crystals photoluminescence spectra were investigated and the corresponding radiative transitions were analyzed. It was found that along with the band-to-band transitions the radiative ones with participation of impurity levels plays a substantial role in the light emission spectrum of the semiconductor. This fact is confirmed by the intensities of the radiative bands for the impurity level – c(v)-band transitions and the donor-acceptor recombination. The temperature dependences of the spectrum in the range of 100 to 300 К have also enabled to ascertain the dynamics of these radiative transitions. At the temperatures 180 to 300 К, the bands associated with the indirect transitions involving indirect free excitons are more intensive. At 100…180 К, the intensity of the bands corresponding to the direct transitions with participation of direct free excitons increases. We have determined the energies of the observed photoluminescence bands, and the band diagram of the corresponding radiative transitions in InSe has been built. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photoemission spectra of indium selenide Article published earlier |
| spellingShingle | Photoemission spectra of indium selenide Katerynchuk, V.M. Kovalyuk, M.Z. Tovarnitskii, M.V. |
| title | Photoemission spectra of indium selenide |
| title_full | Photoemission spectra of indium selenide |
| title_fullStr | Photoemission spectra of indium selenide |
| title_full_unstemmed | Photoemission spectra of indium selenide |
| title_short | Photoemission spectra of indium selenide |
| title_sort | photoemission spectra of indium selenide |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121631 |
| work_keys_str_mv | AT katerynchukvm photoemissionspectraofindiumselenide AT kovalyukmz photoemissionspectraofindiumselenide AT tovarnitskiimv photoemissionspectraofindiumselenide |