Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells
In this work, GaP p-n junctions used in light-diode manufacturing were studied using the electrophysical methods at various temperatures. Current-voltage characteristics of some diodes, controlled by PC and measured in the voltage and current generator modes with various steps, have shown irregulari...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2006 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121633 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells / O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 45-48. — Бібліогр.: 14 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862751790128168960 |
|---|---|
| author | Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| author_facet | Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| citation_txt | Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells / O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 45-48. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this work, GaP p-n junctions used in light-diode manufacturing were studied using the electrophysical methods at various temperatures. Current-voltage characteristics of some diodes, controlled by PC and measured in the voltage and current generator modes with various steps, have shown irregularities in the regions of negative differential resistance and specific before-breakdown part. Long-lasting relaxation of conductivity of GaP crystal with nonuniformity of defect distribution was observed. From analysis of current-flow mechanisms, it was proposed that atypical GaP light-diode electrical characteristics degradation is caused by complex traps shaped as quantum wells in the p-n junction.
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| first_indexed | 2025-12-07T21:13:19Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121633 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T21:13:19Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. 2017-06-15T03:33:06Z 2017-06-15T03:33:06Z 2006 Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells / O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 45-48. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 68.35, 73.40. K https://nasplib.isofts.kiev.ua/handle/123456789/121633 In this work, GaP p-n junctions used in light-diode manufacturing were studied using the electrophysical methods at various temperatures. Current-voltage characteristics of some diodes, controlled by PC and measured in the voltage and current generator modes with various steps, have shown irregularities in the regions of negative differential resistance and specific before-breakdown part. Long-lasting relaxation of conductivity of GaP crystal with nonuniformity of defect distribution was observed. From analysis of current-flow mechanisms, it was proposed that atypical GaP light-diode electrical characteristics degradation is caused by complex traps shaped as quantum wells in the p-n junction. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells Article published earlier |
| spellingShingle | Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| title | Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells |
| title_full | Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells |
| title_fullStr | Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells |
| title_full_unstemmed | Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells |
| title_short | Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells |
| title_sort | features of current-voltage characteristics inherent to gap light-emitting diodes with quantum wells |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121633 |
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