Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2006
• Hauptverfasser: Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121633
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells / O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 45-48. — Бібліогр.: 14 назв. — англ.

In this work, GaP p-n junctions used in light-diode manufacturing were studied using the electrophysical methods at various temperatures. Current-voltage characteristics of some diodes, controlled by PC and measured in the voltage and current generator modes with various steps, have shown irregulari...