Polarizability of D+X complex in bulk semiconductors
The electric polarizability α of ionized-donor-bound exciton D+X in bulk semiconductor is calculated for all values of the effective electron-to-hole mass ratio σ included in the range of stability (σ<σχ). The calculation is performed within the variational method by using 56-term wave function....
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2006 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121639 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Polarizability of D+X complex in bulk semiconductors / M. Katih, J. Diouri, A. El Haddad // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 7-11. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The electric polarizability α of ionized-donor-bound exciton D+X in bulk semiconductor is calculated for all values of the effective electron-to-hole mass ratio σ included in the range of stability (σ<σχ). The calculation is performed within the variational method by using 56-term wave function. An asymptotic behavior of α in the vicinity of the critical value σc is deduced. We have also calculated the limiting value σ for which the polarizability equals that of D− system.
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| ISSN: | 1560-8034 |