Polarizability of D+X complex in bulk semiconductors

The electric polarizability α of ionized-donor-bound exciton D+X in bulk semiconductor is calculated for all values of the effective electron-to-hole mass ratio σ included in the range of stability (σ<σχ). The calculation is performed within the variational method by using 56-term wave function....

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2006
Main Authors: Katih, M., Diouri, J., El Haddad, A.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/121639
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Polarizability of D+X complex in bulk semiconductors / M. Katih, J. Diouri, A. El Haddad // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 7-11. — Бібліогр.: 16 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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Summary:The electric polarizability α of ionized-donor-bound exciton D+X in bulk semiconductor is calculated for all values of the effective electron-to-hole mass ratio σ included in the range of stability (σ<σχ). The calculation is performed within the variational method by using 56-term wave function. An asymptotic behavior of α in the vicinity of the critical value σc is deduced. We have also calculated the limiting value σ for which the polarizability equals that of D− system.
ISSN:1560-8034