Electric properties of TlInS₂ single crystals
Injection currents are studied in high-resistive layer of TlInS2 single crystals and the following parameters were determined: equilibrium concentration of charge carriers in the allowed band p0 = 1.67⋅10¹⁰ cm⁻³; concentration of traps Nt = 10¹²cm⁻³; capture factor θ = 0.17; mobility of charge carri...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2006 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121640 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Electric properties of TlInS₂ single crystals / S.N. Mustafaeva, A.A. Ismailov, N.D. Akhmedzade // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 82-84. — Бібліогр.: 4 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862711863652909056 |
|---|---|
| author | Mustafaeva, S.N. Ismailov, A.A. Akhmedzade, N.D. |
| author_facet | Mustafaeva, S.N. Ismailov, A.A. Akhmedzade, N.D. |
| citation_txt | Electric properties of TlInS₂ single crystals / S.N. Mustafaeva, A.A. Ismailov, N.D. Akhmedzade // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 82-84. — Бібліогр.: 4 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Injection currents are studied in high-resistive layer of TlInS2 single crystals and the following parameters were determined: equilibrium concentration of charge carriers in the allowed band p0 = 1.67⋅10¹⁰ cm⁻³; concentration of traps Nt = 10¹²cm⁻³; capture factor θ = 0.17; mobility of charge carriers μ = 3.3⋅10⁻³cm²/V⋅s; the depth of trap level responsible for the injection current Et = 0.44 eV.
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| first_indexed | 2025-12-07T17:33:21Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121640 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:33:21Z |
| publishDate | 2006 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Mustafaeva, S.N. Ismailov, A.A. Akhmedzade, N.D. 2017-06-15T03:43:26Z 2017-06-15T03:43:26Z 2006 Electric properties of TlInS₂ single crystals / S.N. Mustafaeva, A.A. Ismailov, N.D. Akhmedzade // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 82-84. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS 71.20.Nr; 72.20Fr; 72.20.Ht; 72.20 Jv https://nasplib.isofts.kiev.ua/handle/123456789/121640 Injection currents are studied in high-resistive layer of TlInS2 single crystals and the following parameters were determined: equilibrium concentration of charge carriers in the allowed band p0 = 1.67⋅10¹⁰ cm⁻³; concentration of traps Nt = 10¹²cm⁻³; capture factor θ = 0.17; mobility of charge carriers μ = 3.3⋅10⁻³cm²/V⋅s; the depth of trap level responsible for the injection current Et = 0.44 eV. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Electric properties of TlInS₂ single crystals Article published earlier |
| spellingShingle | Electric properties of TlInS₂ single crystals Mustafaeva, S.N. Ismailov, A.A. Akhmedzade, N.D. |
| title | Electric properties of TlInS₂ single crystals |
| title_full | Electric properties of TlInS₂ single crystals |
| title_fullStr | Electric properties of TlInS₂ single crystals |
| title_full_unstemmed | Electric properties of TlInS₂ single crystals |
| title_short | Electric properties of TlInS₂ single crystals |
| title_sort | electric properties of tlins₂ single crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121640 |
| work_keys_str_mv | AT mustafaevasn electricpropertiesoftlins2singlecrystals AT ismailovaa electricpropertiesoftlins2singlecrystals AT akhmedzadend electricpropertiesoftlins2singlecrystals |