Surface microrelief obtained by composed target deposition for LC molecules alignment

Technology of SiOx:In,Sn aligning films deposited by the cathode reactive sputtering (CRS) method is presented. The influence of In, Sn alloy surface concentration in Si cathode target on aligning film properties are investigated by the AFM and optical profilometry methods. The properties of alignin...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2006
Hauptverfasser: Kolomzarov, Yu., Oleksenko, P., Sorokin, V., Tytarenko, P., Zelinskyy, R.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121643
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Surface microrelief obtained by composed target deposition for LC molecules alignment / Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 4. — С. 58-62. — Бібліогр.: 12 назв. — англ.

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