Amphoteric center of luminescence in CdS
The impurity photoluminescence of cadmium sulphide crystals is studied. The luminescence intensity dependences on temperature from 80 to 300 K are obtained for the bands at 1.7 and 2 eV. The thermal curve of 1.7 eV luminescence intensity has a peak between 100 and 150 K. Both these bands are associa...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2005 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121645 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Amphoteric center of luminescence in CdS / O. O. Artem'jeva, O. V. Vakulenko, O. I. Dacenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 2. — С. 58-60. — Бібліогр.: 6 назв. — англ. |
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Artem'jeva, O. O. Vakulenko, O. V. Dacenko, O. I. 2017-06-15T03:51:00Z 2017-06-15T03:51:00Z 2005 Amphoteric center of luminescence in CdS / O. O. Artem'jeva, O. V. Vakulenko, O. I. Dacenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 2. — С. 58-60. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 71.55.Gs, 78.55.Et https://nasplib.isofts.kiev.ua/handle/123456789/121645 The impurity photoluminescence of cadmium sulphide crystals is studied. The luminescence intensity dependences on temperature from 80 to 300 K are obtained for the bands at 1.7 and 2 eV. The thermal curve of 1.7 eV luminescence intensity has a peak between 100 and 150 K. Both these bands are associated with emission of the center based on the VCd-type intrinsic point defect. The results can be explained within the framework of the theory of amphoteric centers of charge carrier recombination. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Amphoteric center of luminescence in CdS Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Amphoteric center of luminescence in CdS |
| spellingShingle |
Amphoteric center of luminescence in CdS Artem'jeva, O. O. Vakulenko, O. V. Dacenko, O. I. |
| title_short |
Amphoteric center of luminescence in CdS |
| title_full |
Amphoteric center of luminescence in CdS |
| title_fullStr |
Amphoteric center of luminescence in CdS |
| title_full_unstemmed |
Amphoteric center of luminescence in CdS |
| title_sort |
amphoteric center of luminescence in cds |
| author |
Artem'jeva, O. O. Vakulenko, O. V. Dacenko, O. I. |
| author_facet |
Artem'jeva, O. O. Vakulenko, O. V. Dacenko, O. I. |
| publishDate |
2005 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The impurity photoluminescence of cadmium sulphide crystals is studied. The luminescence intensity dependences on temperature from 80 to 300 K are obtained for the bands at 1.7 and 2 eV. The thermal curve of 1.7 eV luminescence intensity has a peak between 100 and 150 K. Both these bands are associated with emission of the center based on the VCd-type intrinsic point defect. The results can be explained within the framework of the theory of amphoteric centers of charge carrier recombination.
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| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121645 |
| citation_txt |
Amphoteric center of luminescence in CdS / O. O. Artem'jeva, O. V. Vakulenko, O. I. Dacenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 2. — С. 58-60. — Бібліогр.: 6 назв. — англ. |
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2025-11-28T17:22:26Z |
| last_indexed |
2025-11-28T17:22:26Z |
| _version_ |
1850854005474852864 |